SIS413DN-T1-GE3

Mfr. #:: SIS413DN-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIS413DN-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: SIS413DN-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-1212-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 18 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 9.4 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 73 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 52 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET, PowerPAK

प्याकेजिङ:: रील

उचाइ:: 1.04 mm

लम्बाइ:: 3.3 mm

शृङ्खला:: SIS

ट्रान्जिस्टर प्रकार:: 1 P-Channel

चौडाइ:: 3.3 mm

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 50 S

पतन समय:: 8 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 11 ns, 82 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 40 ns, 45 ns

सामान्य टर्न-अन ढिलाइ समय:: 11 ns, 55 ns

Tags: SIS41, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS413DN-T1-GE3 विवरण

*** Electronics: Transistor MOSFET P-CH 30V 18A 8-Pin PowerPAK 1212

***ure Electronics: Single P-Channel -30 V 52 W 110 nC TrenchMOS Surface Mount Mosfet

***enic: 30V 18A 52W 9.4m´Î@10V15A 2.5V@250Ã×A P Channel PowerPAK 1212-8 MOSFETs ROHS

***roFlash: Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ied Electronics & Automation: -30V 9.4mOhm@10V -18A P-Ch G-III

*** Source Electronics: MOSFET P-CH 30V 18A PPAK 1212-8

***nell: MOSFET, P-CH, -30V, -18A, POWERPAK 1212; Transistor Polarity: P Channel; Continuous Drain Current Id: -18A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 52W; Transistor Case Style: PowerPAK 1212; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

SIS413DN-T1-GE3 थप जानकारी

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SIS413DN-T1-GE3 DISTI # V72:2272_07431901	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	22	10:$0.4255 1:$0.4623
SIS413DN-T1-GE3 DISTI # V36:1790_07431901	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.2045 1500000:$0.2046 300000:$0.2096 30000:$0.2164 3000:$0.2175
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 18A PPAK 1212-8 Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.1995 6000:$0.2025 3000:$0.2175
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 18A PPAK 1212-8 Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2472 500:$0.3090 100:$0.3909 10:$0.5100 1:$0.5800
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 18A PPAK 1212-8 Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2472 500:$0.3090 100:$0.3909 10:$0.5100 1:$0.5800
SIS413DN-T1-GE3 DISTI # 34538557	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	6000:$0.1849 3000:$0.1898
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS413DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS413DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2352 18000:$0.2414 12000:$0.2480 6000:$0.2549 3000:$0.2621
SIS413DN-T1-GE3 DISTI # 99W9577	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET RoHS: Not Compliant	0	50000:$0.1940 30000:$0.2030 20000:$0.2180 10000:$0.2330 5000:$0.2520 1:$0.2580
SIS413DN-T1-GE3 DISTI # 70AC6482	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212,Transistor Polarity:P Channel,Continuous Drain Current Id:-18A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0076ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V RoHS Compliant: Yes RoHS: Compliant	9	500:$0.2310 1000:$0.2310 100:$0.2500 250:$0.2500 1:$0.2730 25:$0.2730 50:$0.2730
SIS413DN-T1-GE3 DISTI # 70459589	Vishay Siliconix	-30V 9.4mOhm@10V -18A P-Ch G-III RoHS: Not Compliant	0	3000:$0.7420
SIS413DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas -
SIS413DN-T1-GE3 DISTI # 2646403	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	3000:$0.3270 1000:$0.3620 500:$0.4520 100:$0.5470 10:$0.7200 1:$0.8890
SIS413DN-T1-GE3 DISTI # 2679713	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	6000:$0.3090 3000:$0.3270
SIS413DN-T1-GE3 DISTI # 2679713	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	9000:£0.1620 3000:£0.1650
SIS413DN-T1-GE3 DISTI # 2646403RL	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	1500:£0.1810 500:£0.1960 100:£0.2960 50:£0.3890 5:£0.4410
SIS413DN-T1-GE3 DISTI # 2646403	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	1500:£0.1810 500:£0.1960 100:£0.2960 50:£0.3890 5:£0.4410
SIS413DNT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 3000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: BQ25703ARSNT OMO.#: OMO-BQ25703ARSNT	Battery Management NVDC BATTERY BUCK-BOOST CHARGE CONTROLLE
	Mfr.#: RC0402FR-07100KL OMO.#: OMO-RC0402FR-07100KL	Thick Film Resistors - SMD 100K OHM 1%
	Mfr.#: RC0402FR-07100RL OMO.#: OMO-RC0402FR-07100RL	Thick Film Resistors - SMD 100 OHM 1%
	Mfr.#: RC0402FR-0710KL OMO.#: OMO-RC0402FR-0710KL	Thick Film Resistors - SMD 10K OHM 1%
	Mfr.#: GRM32ER61A107ME20L OMO.#: OMO-GRM32ER61A107ME20L	Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 100uF 10volts *Derate Voltage/Temp
	Mfr.#: BLM18PG121SN1D OMO.#: OMO-BLM18PG121SN1D	Ferrite Beads 0603 120 OHM
	Mfr.#: BLM18PG121SN1D OMO.#: OMO-BLM18PG121SN1D-MURATA-ELECTRONICS	EMI Filter Beads, Chips & Arrays 0603 120 OHM
	Mfr.#: BQ25703ARSNT OMO.#: OMO-BQ25703ARSNT-TEXAS-INSTRUMENTS	IC BATT MON MULTI-CHEM 32WQFN
	Mfr.#: RC0402FR-0740K2L OMO.#: OMO-RC0402FR-0740K2L-YAGEO	Thick Film Resistors - SMD 40.2K OHM 1%
	Mfr.#: RC0402FR-07200KL OMO.#: OMO-RC0402FR-07200KL-YAGEO	Thick Film Resistors - SMD 200K OHM 1%

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

SIS413DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.५९~~; ~~US$ ०.५९~~

10: ~~US$ ०.४८~~; ~~US$ ४.७८~~

100: ~~US$ ०.३६~~; ~~US$ ३६.३०~~

500: ~~US$ ०.३०~~; ~~US$ १५०.००~~

1000: ~~US$ ०.२४~~; ~~US$ २४०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SIS41 20
SIS4 92
SIS 843

नवीनतम उत्पादनहरू

SUM70101EL 100 V P-Channel MOSFET

Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
Compare SIS413DN-T1-GE3

SIS4101P vs SIS4101PT1G vs SIS410DN
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
SiP32452, SiP32453 Load Switch

Vishay's load switches have a low input logic control threshold and a fast turn on time.
PowerPAIR®

Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.

More Newest Products

SIS413DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes