OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

FCPF400N80ZL1

FCPF400N80ZL1
Mfr. #:
FCPF400N80ZL1
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET SF2 800V 400MOHM E TO220F
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FCPF400N80ZL1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220FP-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
800 V
आईडी - निरन्तर ड्रेन वर्तमान:
11 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
400 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, 30 V
Qg - गेट चार्ज:
43 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
35.7 W
कन्फिगरेसन:
एकल
व्यापार नाम:
SuperFET II
प्याकेजिङ:
ट्यूब
उचाइ:
16.07 mm
लम्बाइ:
10.36 mm
शृङ्खला:
FCPF400N80ZL1
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.9 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
12 S
पतन समय:
2.6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
12 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
51 ns
सामान्य टर्न-अन ढिलाइ समय:
20 ns
एकाइ वजन:
0.080072 oz
Tags
FCPF40, FCPF4, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220
***ical
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***icroelectronics
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 800 V 14 A 0.375 Ohm SuperMESH 5 Power Mosfet - TO-220
***ical
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220FP Tube
***enic
800V 14A 35W 375m´Î@10V7A 5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 10.2 A, 380 mΩ, TO-220F
***ical
Trans MOSFET N-CH 650V 10.2A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 10.2A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 12A TO-220FP
***ure Electronics
N-Channel 800 V 0.37 Ohm Flange Mount SuperMESH™5 Power Mosfet - TO-220FP
***ark
MOSFET, N-CH, 800V, 12A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 800V, 12A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.37ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***va Crawler
N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package
***et
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP14NK60 Series 600 V 13.5 A 0.5 Ohm N-Ch Power MOSFET - TO-220FPAB
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 13.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 8A 59W 1.55´Î@10V4A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
भाग # Mfg। विवरण स्टक मूल्य
FCPF400N80ZL1
DISTI # V99:2348_06359097		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 2000:$1.2610
  • 1000:$1.2660
  • 500:$1.5480
  • 100:$1.7870
  • 10:$2.2439
  • 1:$2.9359
FCPF400N80ZL1
DISTI # V36:1790_06359097		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE0
  • 1000000:$1.1090
  • 500000:$1.1110
  • 100000:$1.2120
  • 10000:$1.3690
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # FCPF400N80ZL1-ND		ON SemiconductorMOSFET N-CH 800V 11A TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.3937
FCPF400N80ZL1
DISTI # 26637314		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE37000
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # 32826232		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE1000
  • 1000:$1.2213
FCPF400N80ZL1
DISTI # 29068066		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 5:$2.9359
FCPF400N80ZL1
DISTI # FCPF400N80ZL1		ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.0900
  • 50:€1.1900
  • 100:€1.1900
  • 500:€1.1900
  • 25:€1.2900
  • 10:€1.3900
  • 1:€1.5900
FCPF400N80ZL1
DISTI # FCPF400N80ZL1		ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FCPF400N80ZL1
DISTI # 40Y7278		ON SemiconductorSF2 800V 400MOHM E TO220F / TUBE0
  • 10000:$1.2800
  • 2500:$1.3500
  • 1000:$1.4200
  • 500:$1.6700
  • 100:$1.8500
  • 10:$2.2300
  • 1:$2.7500
FCPF400N80ZL1
DISTI # 512-FCPF400N80ZL1		ON SemiconductorMOSFET SF2 800V 400MOHM E TO220F
RoHS: Compliant		3008
  • 1:$2.6900
  • 10:$2.2800
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3200
  • 2000:$1.2300
  • 5000:$1.1900
छवि भाग # विवरण
ST25RU3993-BQFT

Mfr.#: ST25RU3993-BQFT

OMO.#: OMO-ST25RU3993-BQFT

 RFID Transponders RAIN UHF RFID Reader IC
IS25LP016D-JULE-TR

Mfr.#: IS25LP016D-JULE-TR

OMO.#: OMO-IS25LP016D-JULE-TR

 NOR Flash 16Mb QSPI, 8-pin USON 2x3mm, RoHS, T&R
SIHA11N80E-GE3

Mfr.#: SIHA11N80E-GE3

OMO.#: OMO-SIHA11N80E-GE3

 MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
TPS62808YKAR

Mfr.#: TPS62808YKAR

OMO.#: OMO-TPS62808YKAR

 Switching Voltage Regulators TINY HIGH FREQUENCY ULTRA-LOW IQ CONV.
12063C334JAT2A

Mfr.#: 12063C334JAT2A

OMO.#: OMO-12063C334JAT2A

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25V .33uF X7R 1206 5%
STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D

 Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
12063C334JAT2A

Mfr.#: 12063C334JAT2A

OMO.#: OMO-12063C334JAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 0.33uF 25volts X7R 5%
ST25RU3993-EVAL

Mfr.#: ST25RU3993-EVAL

OMO.#: OMO-ST25RU3993-EVAL-1190

 ST25RU3993 reader IC evaluation board
STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D-STMICROELECTRONICS

 DIODE SCHOTTKY 650V 20A TO220AC
ST25RU3993-BQFT

Mfr.#: ST25RU3993-BQFT

OMO.#: OMO-ST25RU3993-BQFT-STMICROELECTRONICS

 IC RFID READER 860-960MHZ 48QFN
उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
FCPF400N80ZL1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.६९
US$ २.६९
10
US$ २.२८
US$ २२.८०
100
US$ १.८३
US$ १८३.००
500
US$ १.६०
US$ ८००.००
1000
US$ १.३२
US$ १ ३२०.००
2000
US$ १.२३
US$ २ ४६०.००
5000
US$ १.१९
US$ ५ ९५०.००
10000
US$ १.१४
US$ ११ ४००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
More Newest Products
Top