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A2G22S190-01SR3

A2G22S190-01SR3
Mfr. #:
A2G22S190-01SR3
निर्माता:
NXP Semiconductors
विवरण:
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
A2G22S190-01SR3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
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ECAD Model:
थप जानकारी:
A2G22S190-01SR3 थप जानकारी A2G22S190-01SR3 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
NXP
उत्पादन कोटि:
आरएफ MOSFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
प्रविधि:
गान सि
आईडी - निरन्तर ड्रेन वर्तमान:
19 mA
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
पाउनु:
16.5 dB
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
NI-400S-2
प्याकेजिङ:
रील
सञ्चालन आवृत्ति:
1800 MHz to 2200 MHz
शृङ्खला:
A2G22S190
प्रकार:
आरएफ पावर MOSFET
ब्रान्ड:
NXP अर्धचालक
च्यानलहरूको संख्या:
1 Channel
उत्पादन प्रकार:
आरएफ MOSFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
250
उपश्रेणी:
MOSFETs
Vgs - गेट-स्रोत भोल्टेज:
- 8 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
- 2.3 V
भाग # उपनाम:
935372783118
Tags
A2G22S1, A2G22, A2G2, A2G
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
छवि भाग # विवरण
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3

 RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
A2G22S190-01SR3

Mfr.#: A2G22S190-01SR3

OMO.#: OMO-A2G22S190-01SR3

 RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3-NXP-SEMICONDUCTORS

 IC TRANS RF LDMOS
A2G22S160

Mfr.#: A2G22S160

OMO.#: OMO-A2G22S160-1190

 नयाँ र मौलिक
A2G22S160--01SR3

Mfr.#: A2G22S160--01SR3

OMO.#: OMO-A2G22S160--01SR3-1190

 नयाँ र मौलिक
A2G22S160-01S

Mfr.#: A2G22S160-01S

OMO.#: OMO-A2G22S160-01S-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
2000
मात्रा प्रविष्ट गर्नुहोस्:
A2G22S190-01SR3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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