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A2G22S160-01SR3

A2G22S160-01SR3
Mfr. #:
A2G22S160-01SR3
निर्माता:
NXP Semiconductors
विवरण:
IC TRANS RF LDMOS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
A2G22S160-01SR3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
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ECAD Model:
थप जानकारी:
A2G22S160-01SR3 थप जानकारी A2G22S160-01SR3 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता
NXP / Freescale
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
Tags
A2G22S160-0, A2G22S16, A2G22S1, A2G22, A2G2, A2G
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
भाग # Mfg। विवरण स्टक मूल्य
A2G22S160-01SR3
DISTI # A2G22S160-01SR3-ND		NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$115.1477
A2G22S160-01SR3
DISTI # A2G22S160-01SR3		Avnet, Inc.GAN 2.2GHZ 160W NI400S-2 - Tape and Reel (Alt: A2G22S160-01SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 250:$126.1900
  • 500:$121.1900
  • 1000:$116.4900
  • 1500:$112.1900
  • 2500:$110.0900
A2G22S160-01SR3
DISTI # A2G22S160-01SR3		Avnet, Inc.GAN 2.2GHZ 160W NI400S-2 (Alt: A2G22S160-01SR3)
RoHS: Compliant
Min Qty: 250		Europe - 0
  • 250:€128.7900
  • 500:€123.6900
  • 1000:€118.8900
  • 1500:€110.3900
  • 2500:€103.0900
A2G22S160-01SR3
DISTI # 51Y5359		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR, 1800-2200 MHZ, 32 W AVG., 48 V REEL 13" Q1 NDP0
  • 100:$108.2300
  • 50:$115.1500
  • 25:$116.8800
  • 10:$118.6100
  • 5:$122.0800
  • 1:$125.5400
A2G22S160-01SR3
DISTI # 841-A2G22S160-01SR3		NXP SemiconductorsRF JFET Transistors A2G22S160-01S/CFM2F///REEL 13 Q1 NDP
RoHS: Compliant		0
  • 250:$112.5600
A2G22S160-01SR3
DISTI # A2G22S160-01SR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$129.8700
छवि भाग # विवरण
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3

 RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
A2G22S190-01SR3

Mfr.#: A2G22S190-01SR3

OMO.#: OMO-A2G22S190-01SR3

 RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3-NXP-SEMICONDUCTORS

 IC TRANS RF LDMOS
A2G22S160

Mfr.#: A2G22S160

OMO.#: OMO-A2G22S160-1190

 नयाँ र मौलिक
A2G22S160--01SR3

Mfr.#: A2G22S160--01SR3

OMO.#: OMO-A2G22S160--01SR3-1190

 नयाँ र मौलिक
A2G22S160-01S

Mfr.#: A2G22S160-01S

OMO.#: OMO-A2G22S160-01S-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
2000
मात्रा प्रविष्ट गर्नुहोस्:
A2G22S160-01SR3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १५०.९९
US$ १५०.९९
10
US$ १४३.४४
US$ १ ४३४.४०
100
US$ १३५.८९
US$ १३ ५८९.१०
500
US$ १२८.३४
US$ ६४ १७०.७५
1000
US$ १२०.७९
US$ १२० ७९२.००
बाट सुरु गर्नुहोस्
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