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SIHF22N60E-E3

SIHF22N60E-E3
Mfr. #:
SIHF22N60E-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHF22N60E-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHF22N60E-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220FP-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
21 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
180 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
57 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
35 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
35 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
27 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
66 ns
सामान्य टर्न-अन ढिलाइ समय:
18 ns
एकाइ वजन:
0.211644 oz
Tags
SIHF22N60E, SIHF22N60, SIHF22, SIHF2, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N CH, 600V, 21A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHF22N60E-E3
DISTI # SIHF22N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO220
Min Qty: 1
Container: Tube		994In Stock
  • 2500:$1.6944
  • 1000:$1.7836
  • 500:$2.1148
  • 100:$2.4843
  • 10:$3.0320
  • 1:$3.3800
SIHF22N60E-E3
DISTI # SIHF22N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak - Rail/Tube (Alt: SIHF22N60E-E3)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHF22N60E-GE3
DISTI # 78-SIHF22N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		862
  • 1:$4.0600
  • 10:$3.3600
  • 100:$2.7600
  • 250:$2.6800
  • 500:$2.4000
  • 1000:$2.3200
  • 2500:$1.9200
SIHF22N60E-E3
DISTI # 781-SIHF22N60E-E3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
RoHS: Compliant		0
    SIHF22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant    		Americas -
      SIHF22N60E-E3
      DISTI # 7689329      		Vishay IntertechnologiesSIHF22N60E-E3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin TO-220FP Vishay, EA
      Min Qty: 1
      Container: Bulk      		16
      • 1:$3.3790
      • 10:$3.2110
      • 20:$3.0750
      SIHF22N60E-E3
      DISTI # 1696158      		Vishay IntertechnologiesIn a Tube of 50, SIHF22N60E-E3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin TO-220FP Vishay, TU
      Min Qty: 50
      Container: Tube      		0
      • 50:$2.9740
      SIHF22N60E-E3
      DISTI # 2079769      		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, TO-220 FULLPAK
      RoHS: Compliant      		0
      • 3000:£1.5400
      • 2000:£1.6000
      • 500:£1.6900
      • 250:£1.8100
      • 100:£1.9600
      • 25:£2.1900
      • 1:£2.6400
      छवि भाग # विवरण
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3

      		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3

      		 MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3-VISHAY

      		 IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
      SIHF22N60S-E3

      Mfr.#: SIHF22N60S-E3

      OMO.#: OMO-SIHF22N60S-E3-126

      		 IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
      SIHF22N60E

      Mfr.#: SIHF22N60E

      OMO.#: OMO-SIHF22N60E-1190

      		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      SIHF22N65E

      Mfr.#: SIHF22N65E

      OMO.#: OMO-SIHF22N65E-1190

      		 नयाँ र मौलिक
      SIHF22N6OE-E3

      Mfr.#: SIHF22N6OE-E3

      OMO.#: OMO-SIHF22N6OE-E3-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3000
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHF22N60E-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1000
      US$ १.७८
      US$ १ ७८०.००
      3000
      US$ १.६९
      US$ ५ ०७०.००
      5000
      US$ १.६३
      US$ ८ १५०.००
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