SIHH28N60E-T1-GE3

SIHH28N60E-T1-GE3
Mfr. #:
SIHH28N60E-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHH28N60E-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHH28N60E-T1-GE3 DatasheetSIHH28N60E-T1-GE3 Datasheet (P4-P6)SIHH28N60E-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHH28N60E-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-8x8-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
29 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
85 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
86 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
202 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
54 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
76 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
84 ns
सामान्य टर्न-अन ढिलाइ समय:
29 ns
एकाइ वजन:
0.068784 oz
Tags
SIHH2, SIHH, SIH
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 29A 5-Pin PowerPAK T/R
***nell
MOSFET, N-CH, 600V, 29A, POWERPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 202W; Transistor Case Style: PowerPAK; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
*** Europe
N-CH SINGLE 650V PPAK 8X8
***
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHH28N60E-T1-GE3
DISTI # V36:1790_17597451
Vishay IntertechnologiesSIHH28N60E-T1-GE30
  • 3000000:$3.1280
  • 1500000:$3.1330
  • 300000:$3.8290
  • 30000:$5.2670
  • 3000:$5.5200
SIHH28N60E-T1-GE3
DISTI # SIHH28N60E-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 29A POWERPAK8
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 2500:$3.2036
  • 1000:$3.3722
  • 500:$3.9984
  • 100:$4.6970
  • 10:$5.7330
  • 1:$6.3800
SIHH28N60E-T1-GE3
DISTI # SIHH28N60E-T1-GE3
Vishay IntertechnologiesPower MOSFET N-Channel 600V 29A 5-Pin PowerPAK T/R - Tape and Reel (Alt: SIHH28N60E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$2.8900
  • 18000:$2.9900
  • 12000:$3.0900
  • 6000:$3.1900
  • 3000:$3.2900
SIHH28N60E-T1-GE3
DISTI # 20AC3837
Vishay IntertechnologiesN-CHANNEL 600V0
  • 20000:$2.8300
  • 12000:$2.8700
  • 8000:$2.9900
  • 4000:$3.2200
  • 2000:$3.4500
  • 1:$3.6100
SIHH28N60E-T1-GE3
DISTI # 78-SIHH28N60E-T1-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
RoHS: Compliant
771
  • 1:$6.4300
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$3.8100
  • 1000:$3.2200
  • 3000:$3.0600
SIHH28N60E-T1-GE3
DISTI # 2708302
Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, POWERPAK
RoHS: Compliant
2961
  • 2500:$4.8400
  • 1000:$5.0900
  • 500:$6.0300
  • 100:$7.0800
  • 10:$8.6400
  • 1:$9.6100
SIHH28N60E-T1-GE3
DISTI # 2708302
Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, POWERPAK2966
  • 500:£2.6200
  • 250:£2.9200
  • 100:£3.0200
  • 10:£3.6500
  • 1:£4.8700
छवि भाग # विवरण
IPL60R065P7AUMA1

Mfr.#: IPL60R065P7AUMA1

OMO.#: OMO-IPL60R065P7AUMA1

MOSFET HIGH POWER_NEW
C0805C106J8RACAUTO

Mfr.#: C0805C106J8RACAUTO

OMO.#: OMO-C0805C106J8RACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 10uF X7R 0805 5% AEC-Q200
C0402C104M4RACAUTO

Mfr.#: C0402C104M4RACAUTO

OMO.#: OMO-C0402C104M4RACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 16V 0.1uF X7R 0402 20% AEC-Q200
IPL60R065P7AUMA1

Mfr.#: IPL60R065P7AUMA1

OMO.#: OMO-IPL60R065P7AUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 4VSON
C0402C104M4RACAUTO

Mfr.#: C0402C104M4RACAUTO

OMO.#: OMO-C0402C104M4RACAUTO-KEMET

Cap Ceramic 0.1uF 16V X7R 20% Pad SMD 0402 125C Automotive
C0805C106J8RACAUTO

Mfr.#: C0805C106J8RACAUTO

OMO.#: OMO-C0805C106J8RACAUTO-KEMET

CAPACITOR MLCC 0805 10UF 10V X7R +/-5%, RL of 2500
उपलब्धता
स्टक:
771
अर्डर मा:
2754
मात्रा प्रविष्ट गर्नुहोस्:
SIHH28N60E-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.४३
US$ ६.४३
10
US$ ५.३३
US$ ५३.३०
100
US$ ४.३९
US$ ४३९.००
250
US$ ४.२५
US$ १ ०६२.५०
500
US$ ३.८१
US$ १ ९०५.००
1000
US$ ३.२२
US$ ३ २२०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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