SI2304DDS-T1-GE3

SI2304DDS-T1-GE3
Mfr. #:
SI2304DDS-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs SOT-23
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2304DDS-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2304DDS-T1-GE3 DatasheetSI2304DDS-T1-GE3 Datasheet (P4-P6)SI2304DDS-T1-GE3 Datasheet (P7-P9)SI2304DDS-T1-GE3 Datasheet (P10)
ECAD Model:
थप जानकारी:
SI2304DDS-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-23-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
3.6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
60 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
6.7 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
1.7 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI2
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
11 S
पतन समय:
5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
12 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
10 ns
सामान्य टर्न-अन ढिलाइ समय:
5 ns
भाग # उपनाम:
SI2304DDS-GE3
एकाइ वजन:
0.000282 oz
Tags
SI2304DDS-T1-G, SI2304DDS-T1, SI2304DDS-T, SI2304DD, SI2304D, SI2304, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI2304DDS-T1-GE3 N-channel MOSFET Transistor; 3.6 A; 30 V; 3-Pin TO-236
***ure Electronics
Single N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3
***ment14 APAC
MOSFET,N CH,30V,3.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.3A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
भाग # Mfg। विवरण स्टक मूल्य
SI2304DDS-T1-GE3
DISTI # V36:1790_07432783
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
RoHS: Compliant
24000
  • 3000:$0.1093
SI2304DDS-T1-GE3
DISTI # V72:2272_07432783
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
RoHS: Compliant
5270
  • 3000:$0.1047
  • 1000:$0.1133
  • 500:$0.1540
  • 250:$0.1895
  • 100:$0.1986
  • 25:$0.2916
  • 10:$0.3239
  • 1:$0.4126
SI2304DDS-T1-GE3
DISTI # SI2304DDS-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 3.3A SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
26271In Stock
  • 1000:$0.1363
  • 500:$0.1817
  • 100:$0.2423
  • 10:$0.3560
  • 1:$0.4400
SI2304DDS-T1-GE3
DISTI # SI2304DDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 3.3A SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
26271In Stock
  • 1000:$0.1363
  • 500:$0.1817
  • 100:$0.2423
  • 10:$0.3560
  • 1:$0.4400
SI2304DDS-T1-GE3
DISTI # SI2304DDS-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 3.3A SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
24000In Stock
  • 75000:$0.0941
  • 30000:$0.0978
  • 15000:$0.1066
  • 6000:$0.1139
  • 3000:$0.1213
SI2304DDS-T1-GE3
DISTI # 33368507
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
RoHS: Compliant
180000
  • 3000:$0.0845
SI2304DDS-T1-GE3
DISTI # 31040547
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
RoHS: Compliant
24000
  • 3000:$0.1093
SI2304DDS-T1-GE3
DISTI # 26717962
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
RoHS: Compliant
5270
  • 89:$0.4126
SI2304DDS-T1-GE3
DISTI # 30607115
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
RoHS: Compliant
3349
  • 69:$0.3637
SI2304DDS-T1-GE3
DISTI # SI2304DDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R (Alt: SI2304DDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 12000
  • 30000:€0.0859
  • 18000:€0.0929
  • 12000:€0.0999
  • 6000:€0.1169
  • 3000:€0.1709
SI2304DDS-T1-GE3
DISTI # SI2304DDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R (Alt: SI2304DDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 9000
  • 150000:$0.1030
  • 75000:$0.1057
  • 30000:$0.1086
  • 15000:$0.1166
  • 9000:$0.1344
  • 6000:$0.1618
  • 3000:$0.1982
SI2304DDS-T1-GE3
DISTI # SI2304DDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2304DDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 9000
  • 30000:$0.0641
  • 18000:$0.0659
  • 12000:$0.0678
  • 6000:$0.0706
  • 3000:$0.0728
SI2304DDS-T1-GE3
DISTI # 35R6205
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 35R6205)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1000:$0.1580
  • 500:$0.2100
  • 250:$0.2360
  • 100:$0.2630
  • 50:$0.3260
  • 25:$0.3890
  • 1:$0.5750
SI2304DDS-T1-GE3
DISTI # 35R6205
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 3.6A,Transistor Polarity:N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,No. of Pins:3Pins RoHS Compliant: Yes1074
  • 1000:$0.1590
  • 500:$0.2130
  • 250:$0.2390
  • 100:$0.2650
  • 50:$0.3290
  • 25:$0.3930
  • 1:$0.5810
SI2304DDS-T1-GE3
DISTI # 23T8495
Vishay IntertechnologiesMOSFET Transistor, N Channel, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V RoHS Compliant: Yes314
  • 1000:$0.1590
  • 500:$0.2130
  • 250:$0.2390
  • 100:$0.2650
  • 50:$0.3290
  • 25:$0.3930
  • 1:$0.5810
SI2304DDS-T1-GE3
DISTI # 35R0030
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 3.6A, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,MSL:- RoHS Compliant: Yes0
  • 50000:$0.0910
  • 30000:$0.1000
  • 20000:$0.1080
  • 10000:$0.1220
  • 5000:$0.1390
  • 1:$0.1470
SI2304DDS-T1-GE3.
DISTI # 26AC3313
Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO12000
  • 50000:$0.0910
  • 30000:$0.1000
  • 20000:$0.1080
  • 10000:$0.1220
  • 5000:$0.1390
  • 1:$0.1470
SI2304DDS-T1-GE3
DISTI # 70459666
Vishay SiliconixSI2304DDS-T1-GE3 N-channel MOSFET Transistor,3.6 A,30 V,3-Pin TO-236
RoHS: Compliant
2500
  • 25:$0.1970
  • 250:$0.1880
  • 500:$0.1790
  • 750:$0.1700
  • 1000:$0.1430
SI2304DDS-T1-GE3
DISTI # 781-SI2304DDS-GE3
Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SOT-23
RoHS: Compliant
56220
  • 1:$0.4500
  • 10:$0.3100
  • 100:$0.2090
  • 500:$0.1670
  • 1000:$0.1250
  • 3000:$0.1150
  • 6000:$0.1080
  • 9000:$0.1010
  • 24000:$0.0930
SI2304DDS-T1-GE3Vishay IntertechnologiesSingle N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3
RoHS: Compliant
3000Reel
  • 3000:$0.0678
  • 6000:$0.0644
SI2304DDS-T1-GE3
DISTI # 8123117
Vishay IntertechnologiesTRANS MOSFET N-CH 30V 3.3A 3-PIN, PK700
  • 1000:£0.1390
  • 500:£0.1510
  • 50:£0.2420
SI2304DDS-T1-GE3
DISTI # 8123117P
Vishay IntertechnologiesTRANS MOSFET N-CH 30V 3.3A 3-PIN, RL8700
  • 1000:£0.1390
  • 500:£0.1510
SI2304DDS-T1-GE3Vishay Intertechnologies 2074
    SI2304DDS-T1-GE3Vishay Siliconix3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-23613
    • 11:$0.3600
    • 1:$0.4800
    SI2304DDS-T1-GE3
    DISTI # 1858939RL
    Vishay IntertechnologiesMOSFET,N CH,30V,3.6A,DIODE,SOT23
    RoHS: Compliant
    0
    • 1000:$0.2060
    • 500:$0.2740
    • 100:$0.3660
    • 10:$0.5360
    • 1:$0.6600
    SI2304DDS-T1-GE3
    DISTI # 1858939
    Vishay IntertechnologiesMOSFET,N CH,30V,3.6A,DIODE,SOT23
    RoHS: Compliant
    3134
    • 1000:$0.2060
    • 500:$0.2740
    • 100:$0.3660
    • 10:$0.5360
    • 1:$0.6600
    SI2304DDS-T1-GE3
    DISTI # 1858939
    Vishay IntertechnologiesMOSFET,N CH,30V,3.6A,DIODE,SOT238564
    • 500:£0.1310
    • 250:£0.1470
    • 100:£0.1630
    • 25:£0.2650
    • 5:£0.2760
    SI2304DDS-T1-GE3
    DISTI # C1S803600844034
    Vishay IntertechnologiesMOSFETs
    RoHS: Compliant
    3349
    • 3000:$0.0894
    • 2000:$0.1120
    • 1000:$0.1130
    • 500:$0.1530
    • 200:$0.1700
    • 100:$0.1860
    • 50:$0.2180
    • 25:$0.2910
    SI2304DDS-T1-GE3
    DISTI # XSKDRABV0026465
    Vishay IntertechnologiesZener Diode, 36V V(Z), 5%, 1W,Silicon,Unidirectional
    RoHS: Compliant
    9000 in Stock0 on Order
    • 9000:$0.1187
    • 6000:$0.1271
    SI2304DDS-T1-GE3
    DISTI # TMOSS6568
    Vishay IntertechnologiesN-CH 30V 3,6A 60mOhm SOT23
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.1301
    • 6000:$0.1226
    • 9000:$0.1152
    • 12000:$0.1041
    • 15000:$0.1003
    SI2304DDS-T1-GE3Vishay Intertechnologies30V,3.6A,0.06,N-Channel Power MOSFET20000
    • 1:$0.3100
    • 100:$0.1300
    • 500:$0.1200
    • 1000:$0.1200
    SI2304DDS-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SOT-23
    RoHS: Compliant
    Americas - 303000
    • 3000:$0.0860
    • 6000:$0.0820
    • 12000:$0.0790
    • 18000:$0.0770
    SI2304DDS-T1-GE3.Vishay IntertechnologiesMOSFET 30V 3.6A 1.7W 60mohm @ 10V
    RoHS: Compliant
    Americas - 2000
    • 25:$0.2791
    • 100:$0.1881
    • 250:$0.1692
    • 500:$0.1503
    • 1000:$0.1226
    छवि भाग # विवरण
    MMBT3906LT1G

    Mfr.#: MMBT3906LT1G

    OMO.#: OMO-MMBT3906LT1G

    Bipolar Transistors - BJT 200mA 40V PNP
    MURS120T3G

    Mfr.#: MURS120T3G

    OMO.#: OMO-MURS120T3G

    Rectifiers 200V 1A Ultrafast
    NTF2955T1G

    Mfr.#: NTF2955T1G

    OMO.#: OMO-NTF2955T1G

    MOSFET -60V 2.6A P-Channel
    SI2309CDS-T1-GE3

    Mfr.#: SI2309CDS-T1-GE3

    OMO.#: OMO-SI2309CDS-T1-GE3

    MOSFET -60V Vds 20V Vgs SOT-23
    IPW60R041C6

    Mfr.#: IPW60R041C6

    OMO.#: OMO-IPW60R041C6

    MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6
    APT1608EC

    Mfr.#: APT1608EC

    OMO.#: OMO-APT1608EC

    Standard LEDs - SMD HI EFF RED WTR CLR
    ERJ-3GEY0R00V

    Mfr.#: ERJ-3GEY0R00V

    OMO.#: OMO-ERJ-3GEY0R00V

    Thick Film Resistors - SMD 0603 Zero Ohms
    SI2309CDS-T1-GE3

    Mfr.#: SI2309CDS-T1-GE3

    OMO.#: OMO-SI2309CDS-T1-GE3-VISHAY

    MOSFET P-CH 60V 1.6A SOT23-3
    B57321V2103J60

    Mfr.#: B57321V2103J60

    OMO.#: OMO-B57321V2103J60-1174

    Thermistors - NTC 10k 4000 3%
    NTF2955T1G

    Mfr.#: NTF2955T1G

    OMO.#: OMO-NTF2955T1G-ON-SEMICONDUCTOR

    नयाँ र मौलिक
    उपलब्धता
    स्टक:
    57
    अर्डर मा:
    2040
    मात्रा प्रविष्ट गर्नुहोस्:
    SI2304DDS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.४५
    US$ ०.४५
    10
    US$ ०.३१
    US$ ३.१०
    100
    US$ ०.२१
    US$ २०.९०
    500
    US$ ०.१७
    US$ ८३.५०
    1000
    US$ ०.१२
    US$ १२५.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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