OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

SI1905BDH-T1-E3

SI1905BDH-T1-E3
Mfr. #:
SI1905BDH-T1-E3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 8.0V 0.63A 0.357W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI1905BDH-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
टेप र रिल (TR)
प्याकेज-केस
6-TSSOP, SC-88, SOT-363
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
आपूर्तिकर्ता-उपकरण-प्याकेज
SC-70-6 (SOT-363)
FET-प्रकार
2 P-Channel (Dual)
पावर-अधिकतम
357mW
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
8V
इनपुट-Capacitance-Ciss-Vds
62pF @ 4V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
630mA
Rds-on-max-Id-Vgs
542 mOhm @ 580mA, 4.5V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
1.5nC @ 4.5V
Tags
SI1905BDH-T1, SI1905B, SI1905, SI190, SI19, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 8V 0.58A 6-Pin SC-70 T/R
***i-Key
MOSFET 2P-CH 8V 0.63A SC70-6
***ponent Sense
MOSFET 8.0V 0.63A 0.357W
***ment14 APAC
P CHANNEL MOSFET, -8V, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-630mA; Drain Source Voltage Vds:-8V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs Typ:-1V
***
1.8V P-CHANNEL
***ark
Transistor; Continuous Drain Current, Id:-630mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:301mW ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI1905BDH-T1-E3
DISTI # SI1905BDH-T1-E3-ND		Vishay SiliconixMOSFET 2P-CH 8V 0.63A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI1905BDH-T1-E3
    DISTI # 781-SI1905BDH-E3    		Vishay IntertechnologiesMOSFET 8.0V 0.63A 0.357W
    RoHS: Compliant    		0
      छवि भाग # विवरण
      SI1905BDH-T1

      Mfr.#: SI1905BDH-T1

      OMO.#: OMO-SI1905BDH-T1-1190

      		 नयाँ र मौलिक
      SI1905BDH-T1-GE3

      Mfr.#: SI1905BDH-T1-GE3

      OMO.#: OMO-SI1905BDH-T1-GE3-1190

      		 नयाँ र मौलिक
      SI1905BDH-TI-E3

      Mfr.#: SI1905BDH-TI-E3

      OMO.#: OMO-SI1905BDH-TI-E3-1190

      		 नयाँ र मौलिक
      SI1905BDH-T1-E3

      Mfr.#: SI1905BDH-T1-E3

      OMO.#: OMO-SI1905BDH-T1-E3-VISHAY

      		 IGBT Transistors MOSFET 8.0V 0.63A 0.357W
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3500
      मात्रा प्रविष्ट गर्नुहोस्:
      SI1905BDH-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
      बाट सुरु गर्नुहोस्
      Top