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SISA66DN-T1-GE3

SISA66DN-T1-GE3
Mfr. #:
SISA66DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds TrenchFET PowerPAK 1212-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SISA66DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
40 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, - 16 V
Qg - गेट चार्ज:
66 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
52 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
3.3 mm
शृङ्खला:
SIS
चौडाइ:
3.3 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
120 S
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
51 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
28 ns
सामान्य टर्न-अन ढिलाइ समय:
30 ns
Tags
SISA, SIS
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET N-Channel 30V 40A 8-Pin PowerPAK T/R
***ment14 APAC
MOSFET, N CH, 30V, 40A, POWERPAK 1212-8
***nell
MOSFET, N CH, 30V, 40A, POWERPAK 1212-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
भाग # Mfg। विवरण स्टक मूल्य
SISA66DN-T1-GE3
DISTI # SISA66DN-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 40A POWERPAK1212
RoHS: Not compliant
Min Qty: 6000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.3959
SISA66DN-T1-GE3
DISTI # SISA66DN-T1-GE3		Vishay IntertechnologiesMOSFET N-Channel 30V 40A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SISA66DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.3629
  • 30000:$0.3729
  • 18000:$0.3839
  • 12000:$0.3999
  • 6000:$0.4119
SISA66DN-T1-GE3
DISTI # 78-SISA66DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds TrenchFET PowerPAK 1212-8
RoHS: Compliant		0
  • 3000:$0.3780
  • 6000:$0.3780
  • 12000:$0.3630
छवि भाग # विवरण
SISA66DN-T1-GE3

Mfr.#: SISA66DN-T1-GE3

OMO.#: OMO-SISA66DN-T1-GE3

 MOSFET 30V Vds TrenchFET PowerPAK 1212-8
SISA66DN-T1-GE3

Mfr.#: SISA66DN-T1-GE3

OMO.#: OMO-SISA66DN-T1-GE3-VISHAY

 MOSFET N-CH 30V 40A POWERPAK1212
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
SISA66DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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