IRFR224TRLPBF

Mfr. #:: IRFR224TRLPBF
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET N-Chan 250V 3.8 Amp
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IRFR224TRLPBF डाटा पाना
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HTML Datasheet:: IRFR224TRLPBF Datasheet IRFR224TRLPBF Datasheet (P4-P6)IRFR224TRLPBF Datasheet (P7-P9)IRFR224TRLPBF Datasheet (P10-P11)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: E

प्रविधि:: सि

प्याकेजिङ:: रील

शृङ्खला:: IRFR

ब्रान्ड:: Vishay / Siliconix

उत्पादन प्रकार:: MOSFET

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

एकाइ वजन:: 0.050717 oz

Tags: IRFR224T, IRFR224, IRFR22, IRFR2, IRFR, IRF

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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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IRFR224TRLPBF विवरण

*** Source Electronics: Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 250V 3.8A DPAK

***et: MOSFET N-CHANNEL 250V

***enic: TO-252-3 MOSFETs ROHS

*** Europe: N-CH SINGLE 250V TO252

***: 250V N-CH HEXFET D-PAK

***ure Electronics: Single N-Channel 250 V 1.1 Ohm 42 W Surface Mount Power Mosfet - TO-252-3

***ark: N Channel Mosfet, 250V, 3.8A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; On Resistance Rds(On):1.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

*** Stop Electro: Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.8 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 1.1 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***th Star Micro: Transistor MOSFET N-CH 200V 4.8A 3-Pin (2+Tab) DPAK

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:4.8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; SMD Marking:IRFR220; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No

***emi: N-Channel Power MOSFET, QFET®, 250 V, 4.4 A, 1 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***i-Key: MOSFET P-CH 250V 4.7A DPAK

***ser: MOSFETs 250V P-Ch QFET

***-Wing Technology: P-CHANNEL POWER MOSFET

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***el Nordic: Contact for details

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK

***nell: MOSFET, N-CH, 200V, 3.8A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.94ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 37W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: QFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IRFR224TRLPBF DISTI # IRFR224TRLPBF-ND	Vishay Siliconix	MOSFET N-CH 250V 3.8A DPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.7425
IRFR224TRLPBF DISTI # IRFR224TRLPBF	Vishay Intertechnologies	Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR224TRLPBF) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6179 6000:€0.4219 12000:€0.3629 18000:€0.3349 30000:€0.3119
IRFR224TRLPBF DISTI # IRFR224TRLPBF	Vishay Intertechnologies	Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR224TRLPBF) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5069 6000:$0.4919 12000:$0.4719 18000:$0.4589 30000:$0.4469
IRFR224TRLPBF DISTI # 844-IRFR224TRLPBF	Vishay Intertechnologies	MOSFET N-Chan 250V 3.8 Amp RoHS: Compliant	0	1:$1.2900 10:$1.0600 100:$0.8130 500:$0.6990 1000:$0.5520 3000:$0.5150 6000:$0.4900 9000:$0.4710
IRFR224TRLPBF	Vishay Intertechnologies	MOSFET N-Chan 250V 3.8 Amp RoHS: Compliant	Americas -

सम्बन्धित उत्पादनहरु

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उपलब्धता

स्टक:: Available
अर्डर मा:: 1985
मात्रा प्रविष्ट गर्नुहोस्:

IRFR224TRLPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.२८~~; ~~US$ १.२८~~

10: ~~US$ १.०५~~; ~~US$ १०.५०~~

100: ~~US$ ०.८१~~; ~~US$ ८१.२०~~

500: ~~US$ ०.७०~~; ~~US$ ३४९.००~~

1000: ~~US$ ०.५५~~; ~~US$ ५५१.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

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IRFR224TRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes