IPB025N08N3 G

Mfr. #:: IPB025N08N3 G
निर्माता:: Infineon Technologies
विवरण:: Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB025N08N3 G डाटा पाना
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थप जानकारी:: IPB025N08N3 G थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Infineon टेक्नोलोजीहरू

उत्पादन कोटि: ट्रान्जिस्टर - FETs, MOSFETs - एकल

शृङ्खला: OptiMOS 3

प्याकेजिङ: रील

अंश-उपनामहरू: IPB025N08N3GATMA1 IPB025N08N3GXT SP000311980

एकाइ - वजन: 0.139332 oz

माउन्टिङ-शैली: SMD/SMT

ट्रेडनेम: OptiMOS

प्याकेज-केस: TO-252-3

प्रविधि: सि

च्यानलहरूको संख्या: 1 Channel

कन्फिगरेसन: एकल

ट्रान्जिस्टर-प्रकार: 1 N-Channel

Pd-शक्ति-डिसिपेशन: 300 W

अधिकतम-सञ्चालन-तापमान: + 175 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 33 ns

उदय-समय: 73 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 120 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 80 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 2.5 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 86 ns

सामान्य-टर्न-अन-डिले-समय: 28 ns

च्यानल-मोड: वृद्धि

Tags: IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB025N08N3 G थप जानकारी

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB025N08N3GATMA1 DISTI # V72:2272_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	491	250:$3.3140 100:$3.6820 25:$4.3940 10:$4.6929 1:$5.4740
IPB025N08N3GATMA1 DISTI # V36:1790_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7603In Stock	500:$3.5581 100:$4.3940 10:$5.3590 1:$6.0000
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7603In Stock	500:$3.5581 100:$4.3940 10:$5.3590 1:$6.0000
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	5000In Stock	2000:$2.7677 1000:$2.9134
IPB025N08N3 G DISTI # 32731516	Infineon Technologies AG	0	1000	200:$4.2840 100:$4.6792 50:$5.7120 10:$5.7758 4:$6.4260
IPB025N08N3GATMA1 DISTI # 31005994	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$2.3063
IPB025N08N3GATMA1 DISTI # 32864934	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$2.1709 500:$2.2288 250:$2.2899 100:$2.3544 50:$2.4226 25:$2.4949 5:$2.5717
IPB025N08N3GATMA1 DISTI # 30331029	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	491	250:$3.5625 100:$3.9581 25:$4.7236 10:$5.0449 3:$5.8845
IPB025N08N3GATMA1 DISTI # SP000311980	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 2000	1000:€2.4900 2000:€2.3900 4000:€2.2900 6000:€2.1900 10000:€1.9900
IPB025N08N3 G DISTI # IPB025N08N3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) RoHS: Compliant Min Qty: 148 Container: Bulk	Americas - 0	149:$2.3900 151:$2.2900 300:$2.1900 745:$2.0900 1490:$2.0900
IPB025N08N3GXT DISTI # IPB025N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.6900 2000:$2.5900 4000:$2.4900 6000:$2.3900 10000:$2.3900
IPB025N08N3GATMA1 DISTI # 60R2648	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	500:$3.1400 250:$3.5000 100:$3.6900 50:$3.8800 25:$4.0600 10:$4.2500 1:$5.0000
IPB025N08N3 G DISTI # 726-IPB025N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1428	1:$5.0000 10:$4.2500 100:$3.6900 250:$3.5000 500:$3.1400 1000:$2.6400 2000:$2.5100
IPB025N08N3 G	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	2700	1000:$2.2400 500:$2.3600 100:$2.4500 25:$2.5600 1:$2.7500
IPB025N08N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	20	1000:$2.2400 500:$2.3600 100:$2.4500 25:$2.5600 1:$2.7500
IPB025N08N3GATMA1 DISTI # 8986898P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 120A TO263-3, RL	258	10:£1.9800
IPB025N08N3GATMA1 DISTI # 1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant	1424	500:£2.4400 250:£2.7200 100:£2.8700 10:£3.3000 1:£4.3400
IPB025N08N3GATMA1 DISTI # 1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant	324	2000:$3.7800 1000:$3.9800 500:$4.7300 250:$5.2700 100:$5.5600 10:$6.4000 1:$7.5400
IPB025N08N3GATMA1 DISTI # XSKDRABS0032304	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$3.4440 1000:$3.6960

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IPB025N10N3 G OMO.#: OMO-IPB025N10N3-G	MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB025N10N3GATMA1 OMO.#: OMO-IPB025N10N3GATMA1	MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB025N08N3GATMA1 OMO.#: OMO-IPB025N08N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPB025N08N3 G OMO.#: OMO-IPB025N08N3-G-1190	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
	Mfr.#: IPB025N08N3G OMO.#: OMO-IPB025N08N3G-1190	नयाँ र मौलिक
	Mfr.#: IPB025N10N3 G OMO.#: OMO-IPB025N10N3-G-1190	MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB025N10N3G OMO.#: OMO-IPB025N10N3G-1190	Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G)
	Mfr.#: IPB025N10N3GATMA1 OMO.#: OMO-IPB025N10N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 180A TO263-7
	Mfr.#: IPB025N10N3GE8187ATMA1 OMO.#: OMO-IPB025N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 180A TO263-7
	Mfr.#: IPB025N10N3GE818XT OMO.#: OMO-IPB025N10N3GE818XT-317	RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
मात्रा प्रविष्ट गर्नुहोस्:

IPB025N08N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ३.१४~~; ~~US$ ३.१४~~

10: ~~US$ २.९८~~; ~~US$ २९.७८~~

100: ~~US$ २.८२~~; ~~US$ २८२.१५~~

500: ~~US$ २.६६~~; ~~US$ १ ३३२.४०~~

1000: ~~US$ २.५१~~; ~~US$ २ ५०८.००~~

बाट सुरु गर्नुहोस्

IPB025N08N3G 3
IPB025N0 4
IPB025 11
IPB02 68
IPB0 405
IPB 1339

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IPB025N08N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes