SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3
Mfr. #:
SIHJ6N65E-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHJ6N65E-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ6N65E-T1-GE3 DatasheetSIHJ6N65E-T1-GE3 Datasheet (P4-P6)SIHJ6N65E-T1-GE3 Datasheet (P7-P9)SIHJ6N65E-T1-GE3 Datasheet (P10-P11)
ECAD Model:
थप जानकारी:
SIHJ6N65E-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8L-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
5.6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
755 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
16 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
74 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
17 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
14 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
एकाइ वजन:
0.017870 oz
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 5.6A 5-Pin(4+Tab) PowerPAK SO T/R
***nell
MOSFET, N-CH, 650V, 5.6A, POWERPAKSO
***ark
Mosfet, N-Ch, 650V, 5.6A, Powerpakso; Transistor Polarity:n Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.755Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
600V/650V E Series PowerPAK SO-8L MOSFETs
Vishay 600V/650V E Series PowerPAK® SO-8L MOSFETs offer increased reliability and reduced package inductance for lighting, industrial, telecom, computing, and consumer applications. Built on Vishay's Superjunction technology, these power MOSFETs feature low maximum ON-resistance down to 0.52Ω at 10V, ultra-low gate charge down to 17nC, and low gate charge times ON-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.Learn More
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHJ6N65E-T1-GE3
DISTI # V72:2272_17581231
Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 5-Pin(4+Tab) PowerPAK SO T/R
RoHS: Compliant
810
  • 75000:$0.9171
  • 30000:$0.9327
  • 15000:$0.9484
  • 6000:$0.9641
  • 3000:$0.9797
  • 1000:$0.9954
  • 500:$1.1963
  • 250:$1.2280
  • 100:$1.3644
  • 50:$1.4241
  • 25:$1.5823
  • 10:$1.7581
  • 1:$2.3217
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3820In Stock
  • 1000:$1.0773
  • 500:$1.3002
  • 100:$1.5826
  • 10:$1.9690
  • 1:$2.1900
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3820In Stock
  • 1000:$1.0773
  • 500:$1.3002
  • 100:$1.5826
  • 10:$1.9690
  • 1:$2.1900
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 6000:$0.9378
  • 3000:$0.9738
SIHJ6N65E-T1-GE3
DISTI # 25817575
Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 5-Pin(4+Tab) PowerPAK SO T/R
RoHS: Compliant
810
  • 8:$2.3217
SIHJ6N65E-T1-GE3
DISTI # SIHJ6N65E-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ6N65E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    SIHJ6N65E-T1-GE3
    DISTI # SIHJ6N65E-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 650V 5.6A 8-Pin PowerPAK SO T/R (Alt: SIHJ6N65E-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.9019
    • 18000:€0.9529
    • 12000:€1.0739
    • 6000:€1.3019
    • 3000:€1.8579
    SIHJ6N65E-T1-GE3
    DISTI # 20AC3839
    Vishay IntertechnologiesN-CHANNEL 650V0
    • 10000:$0.8590
    • 6000:$0.8940
    • 4000:$0.9280
    • 2000:$1.0300
    • 1000:$1.0900
    • 1:$1.1600
    SIHJ6N65E-T1-GE3
    DISTI # 01AC4965
    Vishay IntertechnologiesMOSFET, N-CH, 650V, 5.6A, POWERPAKSO,Transistor Polarity:N Channel,Continuous Drain Current Id:5.6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.755ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes1006
    • 500:$1.3800
    • 250:$1.4700
    • 100:$1.5400
    • 50:$1.6700
    • 25:$1.8100
    • 10:$1.9400
    • 1:$2.3000
    SIHJ6N65E-T1-GE3
    DISTI # 78-SIHJ6N65E-T1-GE3
    Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
    RoHS: Compliant
    5957
    • 1:$2.1300
    • 10:$1.7700
    • 100:$1.3700
    • 500:$1.2000
    SIHJ6N65E-T1-GE3
    DISTI # 2630942
    Vishay IntertechnologiesMOSFET, N-CH, 650V, 5.6A, POWERPAKSO1008
    • 500:£0.8250
    • 250:£0.8860
    • 100:£0.9450
    • 10:£1.2300
    • 1:£1.6700
    SIHJ6N65E-T1-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
    RoHS: Compliant
    Americas -
      SIHJ6N65E-T1-GE3
      DISTI # 2630942
      Vishay IntertechnologiesMOSFET, N-CH, 650V, 5.6A, POWERPAKSO
      RoHS: Compliant
      1006
      • 3000:$1.7800
      • 500:$1.8100
      • 100:$2.0600
      • 10:$2.6700
      • 1:$3.2100
      छवि भाग # विवरण
      SIHJ6N65E-T1-GE3

      Mfr.#: SIHJ6N65E-T1-GE3

      OMO.#: OMO-SIHJ6N65E-T1-GE3

      MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
      SIHJ6N65E-T1-GE3

      Mfr.#: SIHJ6N65E-T1-GE3

      OMO.#: OMO-SIHJ6N65E-T1-GE3-VISHAY

      MOSFET N-CH 650V POWERPAK SO-8L
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1988
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHJ6N65E-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ २.१३
      US$ २.१३
      10
      US$ १.७७
      US$ १७.७०
      100
      US$ १.३७
      US$ १३७.००
      500
      US$ १.२०
      US$ ६००.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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