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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC090N03MSGXT | Infineon Technologies AG | RoHS: Not Compliant | 4770 |
|
| BSC090N03MSGXT DISTI # 726-BSC090N03MSGXT | Infineon Technologies AG | MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M | 0 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: BSC090N03LS G OMO.#: OMO-BSC090N03LS-G |
MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC090N03LSGATMA1 OMO.#: OMO-BSC090N03LSGATMA1 |
MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC090N03MSGXT OMO.#: OMO-BSC090N03MSGXT |
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M |
|
Mfr.#: BSC090N03LSGATMA1 |
MOSFET N-CH 30V 48A TDSON-8 |
|
Mfr.#: BSC090N03MS G OMO.#: OMO-BSC090N03MS-G-1190 |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC090N03MS G) |
|
|
Mfr.#: BSC090N03MSG OMO.#: OMO-BSC090N03MSG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC090N03MSGATMA1 |
MOSFET N-CH 30V 48A TDSON-8 |
|
|
Mfr.#: BSC090N03MSGATMA1 , TDZ |
नयाँ र मौलिक |
|
|
Mfr.#: BSC090N03MSGXT OMO.#: OMO-BSC090N03MSGXT-1190 |
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M |
|
|
Mfr.#: BSC090N03LSGATMA1-CUT TAPE |
नयाँ र मौलिक |
