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STU6NF10

STU6NF10
Mfr. #:
STU6NF10
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-Ch, 100V-0.22ohms 6A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STU6NF10 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STU6NF10 DatasheetSTU6NF10 Datasheet (P4-P6)STU6NF10 Datasheet (P7-P9)STU6NF10 Datasheet (P10-P12)STU6NF10 Datasheet (P13-P14)
ECAD Model:
थप जानकारी:
STU6NF10 थप जानकारी STU6NF10 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
250 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 65 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
30 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
स्ट्रिपफेट
प्याकेजिङ:
ट्यूब
शृङ्खला:
STU6NF10
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
3 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
20 ns
सामान्य टर्न-अन ढिलाइ समय:
6 ns
एकाइ वजन:
0.139332 oz
Tags
STU6N, STU6, STU
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
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*** Source Electronics
Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 100V 6A IPAK
***r Electronics
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***ure Electronics
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***ark
N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
***ure Electronics
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***SIT Distribution GmbH
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
***ment14 APAC
MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 32W 28ns
***Yang
Trans MOSFET N-CH 100V 8.4A 3-Pin(3+Tab) IPAK Rail - Bulk
***inecomponents.com
N-CH/100V/8.4A/0.2OHM/Substitute of IRFU120TU & IRFU120A
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.4A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
***ark
MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
***r Electronics
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
***ineon SCT
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
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***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V
***ure Electronics
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***SIT Distribution GmbH
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***nell
MOSFET, N-CH, 100V, 4.3A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
भाग # Mfg। विवरण स्टक मूल्य
STU6NF10
DISTI # V36:1790_06567881		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R
RoHS: Compliant		0
    STU6NF10
    DISTI # 497-12700-5-ND    		STMicroelectronicsMOSFET N-CH 100V 6A IPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		655In Stock
    • 5025:$0.5077
    • 2550:$0.5344
    • 525:$0.7252
    • 150:$0.8779
    • 75:$1.0688
    • 10:$1.1260
    • 1:$1.2600
    STU6NF10
    DISTI # STU6NF10    		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 75
    Container: Tape and Reel    		Europe - 0
    • 750:€0.1969
    • 450:€0.2259
    • 300:€0.2599
    • 150:€0.3189
    • 75:€0.3999
    STU6NF10
    DISTI # STU6NF10    		STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R - Rail/Tube (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube    		Americas - 0
    • 30000:$0.4429
    • 15000:$0.4519
    • 9000:$0.4729
    • 6000:$0.4949
    • 3000:$0.5199
    STU6NF10
    DISTI # 57P2563    		STMicroelectronicsPTD LOW VOLTAGE0
    • 10000:$0.4520
    • 2500:$0.4650
    • 1000:$0.5760
    • 500:$0.6600
    • 100:$0.7460
    • 10:$0.9720
    • 1:$1.1400
    STU6NF10
    DISTI # 511-STU6NF10    		STMicroelectronicsMOSFET N-Ch, 100V-0.22ohms 6A
    RoHS: Compliant    		3085
    • 1:$1.1400
    • 10:$0.9720
    • 100:$0.7470
    • 500:$0.6600
    • 1000:$0.5210
    • 3000:$0.4620
    • 9000:$0.4450
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1985
    मात्रा प्रविष्ट गर्नुहोस्:
    STU6NF10 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.१४
    US$ १.१४
    10
    US$ ०.९७
    US$ ९.७२
    100
    US$ ०.७५
    US$ ७४.७०
    500
    US$ ०.६६
    US$ ३३०.००
    1000
    US$ ०.५२
    US$ ५२१.००
    3000
    US$ ०.४६
    US$ १ ३८६.००
    9000
    US$ ०.४४
    US$ ४ ००५.००
    24000
    US$ ०.४३
    US$ १० ३४४.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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