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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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The parcel received .. Until i checked
2019-06-08To ukraine in the city of dnieper 16 days! !! Packed in a soft culek with pouches, arrived 5 pieces, and ordered 4-thanks to the seller for a nice bonus.All transformers are working, give an excellent electro arc!!! Seller recommend to cooperation!!!
2019-06-21ok!
2019-02-18Fast delivery and good packing. Great seller!
2019-05-24भाग # | Mfg। | विवरण | स्टक | मूल्य |
---|---|---|---|---|
IGW25N120H3 DISTI # 32015461 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 RoHS: Compliant | 95 |
|
IGW25N120H3FKSA1 DISTI # IGW25N120H3FKSA1-ND | Infineon Technologies AG | IGBT 1200V 50A 326W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube | 3557In Stock |
|
IGW25N120H3FKSA1 DISTI # IGW25N120H3FKSA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW25N120H3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube | Americas - 0 |
|
IGW25N120H3FKSA1 DISTI # 50Y1985 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Bulk (Alt: 50Y1985) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 | |
IGW25N120H3FKSA1 DISTI # 50Y1985 | Infineon Technologies AG | IGBT, 1.2KV, 50A, 175DEG C, 326W, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):2.05V,Power Dissipation Pd:326W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,MSL:MSL 1 - Unlimited RoHS Compliant: Yes | 100 |
|
IGW25N120H3 DISTI # 726-IGW25N120H3 | Infineon Technologies AG | IGBT Transistors IGBT PRODUCTS RoHS: Compliant | 0 |
|
IGW25N120H3FKSA1 DISTI # 726-IGW25N120H3FKSA1 | Infineon Technologies AG | IGBT Transistors IGBT PRODUCTS RoHS: Compliant | 0 |
|
IGW25N120H3XK DISTI # 726-IGW25N120H3XK | Infineon Technologies AG | IGBT Transistors IGBT PRODUCTS RoHS: Compliant | 0 |
|
IGW25N120H3FKSA1 DISTI # 8268232 | Infineon Technologies AG | IGBT N-CH 1200V 50A HIGH-SPEED TO247, EA | 47 |
|
IGW25N120H3 DISTI # IGW25N120H3 | Infineon Technologies AG | Transistor: IGBT,1200V,50A,326W,TO247-3,Series: H3 | 210 |
|
IGW25N120H3 DISTI # IGBT1162 | Infineon Technologies AG | IGBT 1200V50A2.05VTO247-3 RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
IGW25N120H3FKSA1 DISTI # 2480885 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 50A, TO-247-3 RoHS: Compliant | 240 |
|
IGW25N120H3FKSA1 DISTI # 2480885 | Infineon Technologies AG | IGBT, SINGLE, 1.2KV, 50A, TO-247-3 RoHS: Compliant | 240 |
|
छवि | भाग # | विवरण |
---|---|---|
Mfr.#: MJW1302AG OMO.#: OMO-MJW1302AG |
Bipolar Transistors - BJT 15A 250V 200W PNP | |
Mfr.#: MJW3281AG OMO.#: OMO-MJW3281AG |
Bipolar Transistors - BJT 15A 230V 200W NPN | |
Mfr.#: MJW21195G OMO.#: OMO-MJW21195G |
Bipolar Transistors - BJT 16A 250V 200W PNP | |
Mfr.#: C2M0160120D OMO.#: OMO-C2M0160120D |
MOSFET SIC MOSFET 1200V RDS ON 160 mOhm | |
Mfr.#: SG3525ANG OMO.#: OMO-SG3525ANG |
Switching Controllers 8-35V PWM | |
Mfr.#: PR02000201001JR500 OMO.#: OMO-PR02000201001JR500 |
Metal Film Resistors - Through Hole 2watts 1Kohms 5% | |
Mfr.#: PR02000205101JR500 OMO.#: OMO-PR02000205101JR500 |
Metal Film Resistors - Through Hole 2watts 5.1Kohms 5% | |
Mfr.#: PR02000205103JR500 |
Metal Film Resistors - Through Hole 2watts 510Kohms 5% | |
Mfr.#: PR02000203903JR500 |
Metal Film Resistors - Through Hole 2watts 390Kohms 5% | |
Mfr.#: PR02000201001JR500 |
Metal Film Resistors - Through Hole 2watts 1Kohms 5% |