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SQJB60EP-T1_GE3

SQJB60EP-T1_GE3
Mfr. #:
SQJB60EP-T1_GE3
निर्माता:
Vishay
विवरण:
MOSFET 2 N-CH 60V POWERPAK SO8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQJB60EP-T1_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SQJB60EP-T1_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SQJB6, SQJB, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 30A Automotive 8-Pin PowerPAK SO EP
***et
Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET 2 N-CH 60V POWERPAK SO8
***ronik
N+N-CH 60V 30A 12mOhm PPAK SO8L
***ark
Mosfet, Aec-Q101, Dual N-Ch, Powerpakso; Transistor Polarity:dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.01Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Transistor Case Style:PowerPAK SO; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, AEC-Q101, DOPPIO CA-N POWERPAKSO; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.01ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:48W; Modello Case Transistor:PowerPAK SO; No. di Pin:6Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
भाग # Mfg। विवरण स्टक मूल्य
SQJB60EP-T1_GE3
DISTI # V72:2272_17600342		Vishay IntertechnologiesSQJB60EP-T1_GE3**MULT1
9172
3107019		2780
  • 3000:$0.4744
SQJB60EP-T1_GE3
DISTI # V36:1790_17600342		Vishay IntertechnologiesSQJB60EP-T1_GE3**MULT1
9172
3107019		0
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3TR-ND    		Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$0.4368
    • 3000:$0.4586
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3CT-ND    		Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$0.5061
    • 500:$0.6411
    • 100:$0.7761
    • 10:$0.9950
    • 1:$1.1100
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3DKR-ND    		Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$0.5061
    • 500:$0.6411
    • 100:$0.7761
    • 10:$0.9950
    • 1:$1.1100
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4359
    • 18000:€0.4549
    • 12000:€0.5149
    • 6000:€0.6349
    • 3000:€0.8859
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SQJB60EP-T1_GE3
      DISTI # SQJB60EP-T1_GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJB60EP-T1_GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.3999
      • 18000:$0.4109
      • 12000:$0.4219
      • 6000:$0.4399
      • 3000:$0.4539
      SQJB60EP-T1_GE3
      DISTI # 20AC3998      		Vishay IntertechnologiesDUAL N-CHANNEL 60-V (D-S) 175C MOSFE0
      • 10000:$0.3970
      • 6000:$0.4060
      • 4000:$0.4220
      • 2000:$0.4680
      • 1000:$0.5150
      • 1:$0.5370
      SQJB60EP-T1_GE3
      DISTI # 99Y9674      		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes1360
      • 500:$0.7070
      • 250:$0.8050
      • 100:$0.9040
      • 50:$0.9700
      • 25:$1.0400
      • 10:$1.1000
      • 1:$1.2400
      SQJB60EP-T1_GE3
      DISTI # 78-SQJB60EP-T1_GE3      		Vishay IntertechnologiesMOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
      RoHS: Compliant      		0
      • 1:$1.2300
      • 10:$1.0900
      • 100:$0.8950
      • 500:$0.7000
      • 1000:$0.5590
      • 3000:$0.5080
      • 6000:$0.4390
      • 9000:$0.4220
      SQJB60EP-T1_GE3
      DISTI # TMOS1701      		Vishay IntertechnologiesN+N-CH 60V 30A 12mOhm PPAK SO8L
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 3000:$0.5111
      SQJB60EP-T1_GE3
      DISTI # 2663702      		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO
      RoHS: Compliant      		1360
      • 100:$1.3300
      • 10:$1.6800
      • 1:$1.9000
      SQJB60EP-T1_GE3
      DISTI # 2663702      		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO1446
      • 100:£0.7540
      • 25:£0.9810
      • 5:£1.0900
      छवि भाग # विवरण
      SQJB60EP-T1_GE3

      Mfr.#: SQJB60EP-T1_GE3

      OMO.#: OMO-SQJB60EP-T1-GE3

      		 MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
      SQJB60EP-T2_GE3

      Mfr.#: SQJB60EP-T2_GE3

      OMO.#: OMO-SQJB60EP-T2-GE3

      		 MOSFET 60V Vds 20V Vgs PowerPAK SO-8L
      SQJB60EP-T1_GE3

      Mfr.#: SQJB60EP-T1_GE3

      OMO.#: OMO-SQJB60EP-T1-GE3-VISHAY

      		 MOSFET 2 N-CH 60V POWERPAK SO8
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3500
      मात्रा प्रविष्ट गर्नुहोस्:
      SQJB60EP-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.६०
      US$ ०.६०
      10
      US$ ०.५७
      US$ ५.६६
      100
      US$ ०.५४
      US$ ५३.६०
      500
      US$ ०.५१
      US$ २५३.१०
      1000
      US$ ०.४८
      US$ ४७६.४०
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