SQJB60EP-T1_GE3

Mfr. #:: SQJB60EP-T1_GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SQJB60EP-T1_GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SQJB60EP-T1_GE3 Datasheet SQJB60EP-T1_GE3 Datasheet (P4-P6)SQJB60EP-T1_GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:: SQJB60EP-T1_GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-SO-8L-4

च्यानलहरूको संख्या:: 2 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 60 V

आईडी - निरन्तर ड्रेन वर्तमान:: 30 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 10 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.5 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 30 nC, 30 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 48 W

कन्फिगरेसन:: दोहोरो

च्यानल मोड:: वृद्धि

योग्यता:: AEC-Q101

प्याकेजिङ:: रील

शृङ्खला:: SQ

ट्रान्जिस्टर प्रकार:: 2 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 43 S, 43 S

पतन समय:: 25 ns, 25 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 3 ns, 3 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 23 ns, 23 ns

सामान्य टर्न-अन ढिलाइ समय:: 10 ns, 10 ns

एकाइ वजन:: 0.017870 oz

Tags: SQJB6, SQJB, SQJ

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJB60EP-T1_GE3 विवरण

***ical: Trans MOSFET N-CH 60V 30A Automotive 8-Pin PowerPAK SO EP

***et: Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET 2 N-CH 60V POWERPAK SO8

***ronik: N+N-CH 60V 30A 12mOhm PPAK SO8L

***ark: Mosfet, Aec-Q101, Dual N-Ch, Powerpakso; Transistor Polarity:dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.01Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Transistor Case Style:PowerPAK SO; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)

***nell: MOSFET, AEC-Q101, DOPPIO CA-N POWERPAKSO; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.01ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:48W; Modello Case Transistor:PowerPAK SO; No. di Pin:6Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

SQJB60EP-T1_GE3 थप जानकारी

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SQJB60EP-T1_GE3 DISTI # V72:2272_17600342	Vishay Intertechnologies	SQJB60EP-T1_GE3**MULT1 9172 3107019	2780	3000:$0.4744
SQJB60EP-T1_GE3 DISTI # V36:1790_17600342	Vishay Intertechnologies	SQJB60EP-T1_GE3**MULT1 9172 3107019	0
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$0.4368 3000:$0.4586
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5061 500:$0.6411 100:$0.7761 10:$0.9950 1:$1.1100
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5061 500:$0.6411 100:$0.7761 10:$0.9950 1:$1.1100
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4359 18000:€0.4549 12000:€0.5149 6000:€0.6349 3000:€0.8859
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJB60EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3999 18000:$0.4109 12000:$0.4219 6000:$0.4399 3000:$0.4539
SQJB60EP-T1_GE3 DISTI # 20AC3998	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) 175C MOSFE	0	10000:$0.3970 6000:$0.4060 4000:$0.4220 2000:$0.4680 1000:$0.5150 1:$0.5370
SQJB60EP-T1_GE3 DISTI # 99Y9674	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	1360	500:$0.7070 250:$0.8050 100:$0.9040 50:$0.9700 25:$1.0400 10:$1.1000 1:$1.2400
SQJB60EP-T1_GE3 DISTI # 78-SQJB60EP-T1_GE3	Vishay Intertechnologies	MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant	0	1:$1.2300 10:$1.0900 100:$0.8950 500:$0.7000 1000:$0.5590 3000:$0.5080 6000:$0.4390 9000:$0.4220
SQJB60EP-T1_GE3 DISTI # TMOS1701	Vishay Intertechnologies	N+N-CH 60V 30A 12mOhm PPAK SO8L RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.5111
SQJB60EP-T1_GE3 DISTI # 2663702	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO RoHS: Compliant	1360	100:$1.3300 10:$1.6800 1:$1.9000
SQJB60EP-T1_GE3 DISTI # 2663702	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO	1446	100:£0.7540 25:£0.9810 5:£1.0900

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	Mfr.#: 2129691-1 OMO.#: OMO-2129691-1	USB Connectors USB 3.1 Type C Recpt Offset 0.485MM
	Mfr.#: TPS560430XDBVR OMO.#: OMO-TPS560430XDBVR-TEXAS-INSTRUMENTS	IC REG BUCK PFM 600MA SOT23-6
	Mfr.#: LMR23625CFQDDARQ1 OMO.#: OMO-LMR23625CFQDDARQ1-TEXAS-INSTRUMENTS	IC REG BUCK ADJ 2.5A 8SOPWR

उपलब्धता

स्टक:: Available
अर्डर मा:: 1987
मात्रा प्रविष्ट गर्नुहोस्:

SQJB60EP-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.०९~~; ~~US$ १.०९~~

10: ~~US$ ०.९०~~; ~~US$ ८.९८~~

100: ~~US$ ०.६९~~; ~~US$ ६८.९०~~

500: ~~US$ ०.५९~~; ~~US$ २९६.००~~

1000: ~~US$ ०.४७~~; ~~US$ ४६७.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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SQJB60EP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes