PSMN8R5-108ES

PSMN8R5-108ES
Mfr. #:
PSMN8R5-108ES
निर्माता:
Rochester Electronics, LLC
विवरण:
Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
PSMN8R5-108ES डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
NXP अर्धचालक
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
रील
एकाइ - वजन
0.084199 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
I2PAK-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
263 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
43 ns
उदय-समय
35 ns
Vgs-गेट-स्रोत-भोल्टेज
4.4 V
आईडी-निरन्तर-नाली-वर्तमान
100 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
108 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
3 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
8.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
87 ns
सामान्य-टर्न-अन-डिले-समय
20 ns
Qg-गेट-चार्ज
111 nC
च्यानल-मोड
वृद्धि
Tags
PSMN8R5-108, PSMN8R5-1, PSMN8R5, PSMN8, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 108V, 100A, TO-262-3
***nell
MOSFET, N CH, 108V, 100A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:108V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-226; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
भाग # Mfg। विवरण स्टक मूल्य
PSMN8R5-108ESQ
DISTI # 568-11432-5-ND
NXP SemiconductorsMOSFET N-CH 108V 100A I2PAK
RoHS: Compliant
Min Qty: 5000
Container: Tube
Limited Supply - Call
    PSMN8R5-108ES
    DISTI # 771-PSMN8R5-108ES
    NexperiaMOSFET N-Channel 100V 8.5mohm Fet
    RoHS: Compliant
    0
    • 5000:$1.1500
    PSMN8R5-108ESQ
    DISTI # 771-PSMN8R5-108ESQ
    NexperiaMOSFET PSMN8R5-108ES/I2PAK/STANDARD M
    RoHS: Compliant
    0
      PSMN8R5-108ESNXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      466
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ES127NXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      167
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ESQ127NXP SemiconductorsNow Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Not Compliant
      330
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      छवि भाग # विवरण
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      Mfr.#: PSMN8R0-80YLX

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      PSMN8R0-40PS

      Mfr.#: PSMN8R0-40PS

      OMO.#: OMO-PSMN8R0-40PS-1190

      MOSFET Transistor, N Channel, 77 A, 40 V, 6.2 mohm, 10 V, 3 V RoHS Compliant: Yes
      PSMN8R0-40PS127

      Mfr.#: PSMN8R0-40PS127

      OMO.#: OMO-PSMN8R0-40PS127-1190

      Now Nexperia PSMN8R0-40PS - Power Field-Effect Transistor, 77A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      PSMN8R5-100PSQ

      Mfr.#: PSMN8R5-100PSQ

      OMO.#: OMO-PSMN8R5-100PSQ-NEXPERIA

      IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH
      PSMN8R0-40BS,118

      Mfr.#: PSMN8R0-40BS,118

      OMO.#: OMO-PSMN8R0-40BS-118-NEXPERIA

      MOSFET N-CH 40V 77A D2PAK
      PSMN8R5-108ESQ127

      Mfr.#: PSMN8R5-108ESQ127

      OMO.#: OMO-PSMN8R5-108ESQ127-1190

      Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      PSMN8R5-100PSFQ

      Mfr.#: PSMN8R5-100PSFQ

      OMO.#: OMO-PSMN8R5-100PSFQ-NEXPERIA

      MOSFET N-CH 100V 98A TO220AB
      PSMN8R9-100BSEJ

      Mfr.#: PSMN8R9-100BSEJ

      OMO.#: OMO-PSMN8R9-100BSEJ-NEXPERIA

      PSMN8R9-100BSE/SOT404/D2PAK
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      PSMN8R5-108ES को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.२३
      US$ १.२३
      10
      US$ १.१७
      US$ ११.६८
      100
      US$ १.११
      US$ ११०.७०
      500
      US$ १.०५
      US$ ५२२.७५
      1000
      US$ ०.९८
      US$ ९८४.००
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