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IRF6662TR1PBF

IRF6662TR1PBF
Mfr. #:
IRF6662TR1PBF
निर्माता:
Infineon / IR
विवरण:
MOSFET MOSFT 100V 47A 22mOhm 22nC Qg
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF6662TR1PBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6662TR1PBF DatasheetIRF6662TR1PBF Datasheet (P4-P6)IRF6662TR1PBF Datasheet (P7-P9)IRF6662TR1PBF Datasheet (P10)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
DirectFET-MZ
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
8.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
17.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4.9 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
22 nC
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
89 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
रील
उचाइ:
0.7 mm
लम्बाइ:
6.35 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.05 mm
ब्रान्ड:
Infineon / IR
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
11 S
पतन समय:
5.9 ns
नमी संवेदनशील:
हो
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7.5 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SP001559718
एकाइ वजन:
0.035274 oz
Tags
IRF6662, IRF666, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 17.5 Milliohms; Id 8.3A; Mz; Pd 2.8W; Vgs +/-20
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:2.8mW; Transistor Case Style:DirectFET MZ; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:39mJ; Base Number:6662; Cont Current Id @ 70°C:6.6A; Current Id Max:6.6A; Fall Time tf:5.9ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:66A; Rise Time:7.5ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:Surface Mount Device; Voltage Vds:25V; Voltage Vds Typ:100V; Voltage Vgs Max:3.9V; Voltage Vgs Rds on Measurement:10V
भाग # Mfg। विवरण स्टक मूल्य
IRF6662TR1PBF
DISTI # IRF6662TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6662TR1PBF
    DISTI # IRF6662TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6662TR1PBF
      DISTI # IRF6662TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6662TR1PBF
        DISTI # 70017404        		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 17.5 Milliohms,ID 8.3A,MZ,PD 2.8W,VGS +/-20
        RoHS: Compliant        		0
        • 1000:$1.9400
        • 2000:$1.7600
        IRF6662TR1PBF
        DISTI # 942-IRF6662TR1PBF        		Infineon Technologies AGMOSFET MOSFT 100V 47A 22mOhm 22nC Qg
        RoHS: Compliant        		0
          IRF6662TR1PBF
          DISTI # 1388570          		Infineon Technologies AGMOSFET, N, DIRECTFET, MZ
          RoHS: Compliant          		0
          • 2000:$2.3100
          • 1000:$2.4800
          • 500:$2.8000
          • 100:$3.1300
          • 10:$3.8700
          • 1:$4.7000
          छवि भाग # विवरण
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF

          		 MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ
          IRF6665

          Mfr.#: IRF6665

          OMO.#: OMO-IRF6665

          		 MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET
          IRF6665TRPBF.

          Mfr.#: IRF6665TRPBF.

          OMO.#: OMO-IRF6665TRPBF--1190

          		 नयाँ र मौलिक
          IRF6668TR1

          Mfr.#: IRF6668TR1

          OMO.#: OMO-IRF6668TR1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 80V 55A DIRECTFET-MZ
          IRF6665TR1

          Mfr.#: IRF6665TR1

          OMO.#: OMO-IRF6665TR1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 100V DIRECTFET-SH
          IRF6665TR1PBF

          Mfr.#: IRF6665TR1PBF

          OMO.#: OMO-IRF6665TR1PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 100V 4.2A DIRECTFET
          IRF6668

          Mfr.#: IRF6668

          OMO.#: OMO-IRF6668-1190

          		 नयाँ र मौलिक
          IRF6668TR

          Mfr.#: IRF6668TR

          OMO.#: OMO-IRF6668TR-1190

          		 नयाँ र मौलिक
          IRF6668TR1PBF

          Mfr.#: IRF6668TR1PBF

          OMO.#: OMO-IRF6668TR1PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 80V 55A DIRECTFET
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          5000
          मात्रा प्रविष्ट गर्नुहोस्:
          IRF6662TR1PBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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