IRF640NLPBF

IRF640NLPBF
Mfr. #:
IRF640NLPBF
निर्माता:
Infineon Technologies
विवरण:
IGBT Transistors MOSFET MOSFT 200V 18A 150mOhm 44.7nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF640NLPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IRF640NLPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
IR
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.084199 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
I2PAK-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
150 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
5.5 ns
उदय-समय
19 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
18 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
200 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
150 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
23 ns
सामान्य-टर्न-अन-डिले-समय
10 ns
Qg-गेट-चार्ज
44.7 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
6.8 S
च्यानल-मोड
वृद्धि
Tags
IRF640N, IRF640, IRF64, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V
***ure Electronics
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3
*** Source Electronics
MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 200V, 18A, TO-262; Tra; N CHANNEL MOSFET, 200V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRF640NLPBF
DISTI # V99:2348_13890573
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
987
  • 10000:$0.6538
  • 5000:$0.6767
  • 2500:$0.6988
  • 1000:$0.7413
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
  • 1:$1.2932
IRF640NLPBF
DISTI # IRF640NLPBF-ND
Infineon Technologies AGMOSFET N-CH 200V 18A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube
2168In Stock
  • 1000:$1.0174
  • 500:$1.2056
  • 100:$1.5191
  • 10:$1.8640
  • 1:$2.0500
IRF640NLPBF
DISTI # 27158271
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
7506
  • 1000:$0.8336
  • 500:$1.0060
  • 100:$1.1491
  • 27:$1.4414
IRF640NLPBF
DISTI # 26198161
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
IRF640NLPBF
DISTI # IRF640NLPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF640NLPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.6569
  • 2000:$0.6329
  • 4000:$0.6099
  • 6000:$0.5889
  • 10000:$0.5789
IRF640NLPBF
DISTI # SP001563296
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 (Alt: SP001563296)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€0.6069
  • 10:€0.5399
  • 25:€0.4859
  • 50:€0.4409
  • 100:€0.4049
  • 500:€0.3729
  • 1000:€0.3469
IRF640NLPBF
DISTI # 63J7350
Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):150mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes1000
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 70017531
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,TO-262,PD 150W,VGS +/-20V
RoHS: Compliant
0
  • 650:$2.1500
IRF640NLPBFInternational Rectifier 
RoHS: Not Compliant
2350
  • 1000:$0.8400
  • 500:$0.8800
  • 100:$0.9200
  • 25:$0.9600
  • 1:$1.0300
IRF640NLPBF
DISTI # 942-IRF640NLPBF
Infineon Technologies AGMOSFET MOSFT 200V 18A 150mOhm 44.7nC
RoHS: Compliant
731
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 8312859
Infineon Technologies AGHEXFET N-CH MOSFET 18A 200V TO-262, PK560
  • 5:£1.3020
  • 25:£1.0280
  • 50:£0.9280
  • 125:£0.8260
  • 250:£0.8100
IRF640NLPBF
DISTI # IRF640NLPBF
Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,18A,150W,TO262352
  • 1:$1.0200
  • 3:$0.9600
  • 10:$0.8100
  • 100:$0.7300
IRF640NLPBF
DISTI # 2576887
Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant
1000
  • 1:$2.6600
  • 10:$2.2700
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3200
IRF640NLPBF.
DISTI # 9537511
Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262
RoHS: Compliant
64
  • 1:$1.0300
IRF640NLPBF
DISTI # 2576887
Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant
1025
  • 5:£1.2000
  • 25:£0.8260
  • 100:£0.8220
  • 250:£0.8180
  • 500:£0.7630
IRF640NLPBF
DISTI # C1S322000481453
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
छवि भाग # विवरण
IRF644NSTRLPBF

Mfr.#: IRF644NSTRLPBF

OMO.#: OMO-IRF644NSTRLPBF

MOSFET N-Chan 250V 14 Amp
IRF640,IRF640A,IRF640B

Mfr.#: IRF640,IRF640A,IRF640B

OMO.#: OMO-IRF640-IRF640A-IRF640B-1190

नयाँ र मौलिक
IRF640A8H

Mfr.#: IRF640A8H

OMO.#: OMO-IRF640A8H-1190

नयाँ र मौलिक
IRF640FP

Mfr.#: IRF640FP

OMO.#: OMO-IRF640FP-STMICROELECTRONICS

MOSFET N-CH 200V 18A TO-220FP
IRF640NS

Mfr.#: IRF640NS

OMO.#: OMO-IRF640NS-1190

MOSFET N-CHANNEL 200V 18A D2PAK, EA
IRF640R

Mfr.#: IRF640R

OMO.#: OMO-IRF640R-1190

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF643

Mfr.#: IRF643

OMO.#: OMO-IRF643-1190

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF644NLPBF

Mfr.#: IRF644NLPBF

OMO.#: OMO-IRF644NLPBF-VISHAY

MOSFET N-CH 250V 14A TO-262
IRF644NSTRLPBF

Mfr.#: IRF644NSTRLPBF

OMO.#: OMO-IRF644NSTRLPBF-VISHAY

MOSFET N-CH 250V 14A D2PAK
IRF645A

Mfr.#: IRF645A

OMO.#: OMO-IRF645A-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
2000
मात्रा प्रविष्ट गर्नुहोस्:
IRF640NLPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.५१
US$ ०.५१
10
US$ ०.४९
US$ ४.८९
100
US$ ०.४६
US$ ४६.२९
500
US$ ०.४४
US$ २१८.६०
1000
US$ ०.४१
US$ ४११.५०
बाट सुरु गर्नुहोस्
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