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FDP5N60NZ

FDP5N60NZ
Mfr. #:
FDP5N60NZ
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 600V N-Channel MOSFET, UniFET-II
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FDP5N60NZ डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
FDP5N60NZ थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
4.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.65 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
5 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
10 nC
Pd - शक्ति अपव्यय:
100 W
कन्फिगरेसन:
एकल
व्यापार नाम:
UniFET
प्याकेजिङ:
ट्यूब
उचाइ:
16.3 mm
लम्बाइ:
10.67 mm
शृङ्खला:
FDP5N60NZ
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.7 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
5 S
पतन समय:
20 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.063493 oz
Tags
FDP5N, FDP5, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 4.5 A, 600 V, 3-Pin TO-220 ON Semiconductor FDP5N60NZ
***Semiconductor
N-Channel Power MOSFET, UniFETTM II, 600V, 4A, 2Ω, TO-220
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Tube
***ark
RAIL/UniFET2 600V N-Channel MOSFET, TO220
***i-Key
MOSFET N-CH 600V 4.5A TO-220-3
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
N-Channel UniFET II™ MOSFETs
ON Semiconductor UniFET II™ MOSFETs are N-channel enhancement mode power field effect transistors that are produced using proprietary, planar stripe, DMOS technology. The advanced technology of UniFET II MOSFETs has been tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These MOSFETs are well-suited for high efficiency switching mode power supplies and active power factor correction.Learn More
भाग # Mfg। विवरण स्टक मूल्य
FDP5N60NZ
DISTI # 26733896		ON SemiconductorUNIFET2 600V N-CHANNEL MOSFET,800
  • 800:$0.6606
FDP5N60NZ
DISTI # FDP5N60NZ-ND		ON SemiconductorMOSFET N-CH 600V 4.5A TO-220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$0.6605
FDP5N60NZ
DISTI # V36:1790_06359306		ON SemiconductorUNIFET2 600V N-CHANNEL MOSFET,0
  • 800000:$0.4013
  • 400000:$0.4018
  • 80000:$0.4767
  • 8000:$0.6330
  • 800:$0.6606
FDP5N60NZ
DISTI # FDP5N60NZ		ON SemiconductorTrans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP5N60NZ)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.4079
  • 4800:$0.4189
  • 3200:$0.4239
  • 1600:$0.4299
  • 800:$0.4319
FDP5N60NZ
DISTI # FDP5N60NZ		ON SemiconductorTrans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP5N60NZ)
Min Qty: 582
Container: Bulk		Americas - 0
  • 5820:$0.5299
  • 2910:$0.5439
  • 1746:$0.5509
  • 1164:$0.5579
  • 582:$0.5619
FDP5N60NZ
DISTI # FDP5N60NZ		ON SemiconductorTrans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP5N60NZ)
RoHS: Compliant
Min Qty: 800		Asia - 0
  • 40000:$0.5428
  • 20000:$0.5518
  • 8000:$0.5709
  • 4000:$0.5913
  • 2400:$0.6131
  • 1600:$0.6367
  • 800:$0.6622
FDP5N60NZ
DISTI # 54T8357		ON SemiconductorUF2 600V 2.0OHM TO220 / TUBE0
  • 10000:$0.4980
  • 2500:$0.5130
  • 1000:$0.6360
  • 500:$0.7280
  • 100:$0.8230
  • 10:$1.0800
  • 1:$1.2600
FDP5N60NZ
DISTI # 512-FDP5N60NZ		ON SemiconductorMOSFET 600V N-Channel MOSFET, UniFET-II
RoHS: Compliant		741
  • 1:$1.0800
  • 10:$0.9260
  • 100:$0.7110
  • 500:$0.6290
  • 1000:$0.4960
  • 2500:$0.4400
  • 10000:$0.4230
FDP5N60NZFairchild Semiconductor CorporationPower Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1756
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
FDP5N60NZ
DISTI # 8063563		ON SemiconductorMOSFETFAIRCHILDFDP5N60NZ, PK185
  • 50:£0.3120
  • 5:£0.3180
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ATECC608A-SSHDA-B

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CRCW12060000Z0EBC

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OMO.#: OMO-CRCW12060000Z0EBC-VISHAY-DALE

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Mfr.#: CRCW12063R90FKEA

OMO.#: OMO-CRCW12063R90FKEA-VISHAY-DALE

 Res Thick Film 1206 3.9 Ohm 1% 0.25W(1/4W) ±100ppm/°C Pad SMD Automotive T/R
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OMO.#: OMO-ATECC608A-SSHDA-B-MICROCHIP-TECHNOLOGY

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Mfr.#: CRCW120610K0FKEAC

OMO.#: OMO-CRCW120610K0FKEAC-VISHAY-DALE

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OMO.#: OMO-DRV5053OAQLPG-TEXAS-INSTRUMENTS

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उपलब्धता
स्टक:
741
अर्डर मा:
2724
मात्रा प्रविष्ट गर्नुहोस्:
FDP5N60NZ को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.०८
US$ १.०८
10
US$ ०.९३
US$ ९.२६
100
US$ ०.७१
US$ ७१.१०
500
US$ ०.६३
US$ ३१४.५०
1000
US$ ०.५०
US$ ४९६.००
2500
US$ ०.४४
US$ १ १००.००
10000
US$ ०.४२
US$ ४ २३०.००
25000
US$ ०.४१
US$ १० २५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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