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IPP60R180P7XKSA1

IPP60R180P7XKSA1
Mfr. #:
IPP60R180P7XKSA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPP60R180P7XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPP60R180P7XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
18 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
145 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
25 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
72 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
ट्यूब
शृङ्खला:
CoolMOS P7
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
12 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
85 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
भाग # उपनाम:
IPP60R180P7 SP001606038
एकाइ वजन:
0.063493 oz
Tags
IPP60R18, IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 650 V 180 mOhm 25 nC CoolMOS™ Power Mosfet - TO-220
***ow.cn
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube
***ark
High Power_New Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
भाग # Mfg। विवरण स्टक मूल्य
IPP60R180P7XKSA1
DISTI # V99:2348_17076885		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube0
  • 1000:$1.0624
  • 500:$1.0965
  • 100:$1.5648
  • 10:$1.9106
  • 1:$2.2043
IPP60R180P7XKSA1
DISTI # IPP60R180P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 18A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		488In Stock
  • 1000:$1.4605
  • 500:$1.7305
  • 100:$2.1805
  • 10:$2.6750
  • 1:$2.9500
IPP60R180P7XKSA1
DISTI # IPP60R180P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R180P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.1779
  • 502:$1.1359
  • 1002:$1.0949
  • 2500:$1.0579
  • 5000:$1.0389
IPP60R180P7XKSA1
DISTI # SP001606038		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001606038)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3619
  • 10:€1.2379
  • 25:€1.1349
  • 50:€1.0899
  • 100:€1.0479
  • 500:€1.0089
  • 1000:€0.9729
IPP60R180P7XKSA1
DISTI # 726-IPP60R180P7XKSA1		Infineon Technologies AGMOSFET
RoHS: Compliant		5441
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
  • 1000:$1.1800
IPP60R180P7XKSA1
DISTI # 2784035		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-220
RoHS: Compliant		0
  • 1000:$1.7400
  • 500:$1.8300
  • 250:$1.9300
  • 100:$2.0500
  • 10:$2.3100
  • 1:$2.4700
IPP60R180P7XKSA1
DISTI # 2784035		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-220
RoHS: Compliant		0
  • 500:£1.1100
  • 250:£1.1900
  • 100:£1.2600
  • 10:£1.5900
  • 1:£2.1100
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KBU8M

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OMO.#: OMO-KBU8M

 Bridge Rectifiers 1000V 8A Bridge Rectifier
DFB2580

Mfr.#: DFB2580

OMO.#: OMO-DFB2580

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DFLZ18-7

Mfr.#: DFLZ18-7

OMO.#: OMO-DFLZ18-7

 Zener Diodes 1.0W 18V
STTH2R06A

Mfr.#: STTH2R06A

OMO.#: OMO-STTH2R06A

 Rectifiers RECTIFIER
UC2845D8TR

Mfr.#: UC2845D8TR

OMO.#: OMO-UC2845D8TR

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DSSK70-008A

Mfr.#: DSSK70-008A

OMO.#: OMO-DSSK70-008A

 Schottky Diodes & Rectifiers 70 Amps 80V
2EDF7175FXUMA1

Mfr.#: 2EDF7175FXUMA1

OMO.#: OMO-2EDF7175FXUMA1

 Gate Drivers
CRCW12061K50FKEB

Mfr.#: CRCW12061K50FKEB

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 Thick Film Resistors - SMD 1/4watt 1.5Kohms 1%
उपलब्धता
स्टक:
Available
अर्डर मा:
1989
मात्रा प्रविष्ट गर्नुहोस्:
IPP60R180P7XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.४०
US$ २.४०
10
US$ २.०४
US$ २०.४०
100
US$ १.६३
US$ १६३.००
500
US$ १.४३
US$ ७१५.००
1000
US$ १.१८
US$ १ १८०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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