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SIRC04DP-T1-GE3

SIRC04DP-T1-GE3
Mfr. #:
SIRC04DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIRC04DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRC04DP-T1-GE3 DatasheetSIRC04DP-T1-GE3 Datasheet (P4-P6)SIRC04DP-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIRC04DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
3.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.1 V
Vgs - गेट-स्रोत भोल्टेज:
- 16 V, 20 V
Qg - गेट चार्ज:
16.6 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
50 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIR
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
140 S
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
55 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
30 ns
Tags
SIRC0, SIRC, SIR
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***i-Key
MOSFET N-CH 30V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.00205Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, 150DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:50W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 30V, 60A, 150°C, 50W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.00205ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.1V; Dissipazione di Potenza Pd:50W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.7316
  • 3000:$0.7598
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.8405
  • 500:$1.0144
  • 100:$1.2347
  • 10:$1.5360
  • 1:$1.7100
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.8405
  • 500:$1.0144
  • 100:$1.2347
  • 10:$1.5360
  • 1:$1.7100
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC04DP-T1-GE3)
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.6869
  • 30000:$0.7059
  • 18000:$0.7259
  • 12000:$0.7569
  • 6000:$0.7799
SIRC04DP-T1-GE3
DISTI # 81AC2785		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00205ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes6050
  • 500:$0.9480
  • 250:$1.0100
  • 100:$1.0800
  • 50:$1.1900
  • 25:$1.2900
  • 10:$1.3900
  • 1:$1.6800
SIRC04DP-T1-GE3
DISTI # 59AC7426		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.6700
  • 6000:$0.6970
  • 4000:$0.7240
  • 2000:$0.8040
  • 1000:$0.8470
  • 1:$0.9010
SIRC04DP-T1-GE3
DISTI # 78-SIRC04DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		5996
  • 1:$1.6600
  • 10:$1.3800
  • 100:$1.0700
  • 500:$0.9390
  • 1000:$0.7780
  • 3000:$0.7240
  • 6000:$0.6970
SIRC04DP-T1-GE3
DISTI # 2932950		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W6050
  • 500:£0.6800
  • 250:£0.7280
  • 100:£0.7750
  • 10:£1.0500
  • 1:£1.3700
SIRC04DP-T1-GE3
DISTI # 2932950		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W
RoHS: Compliant		6050
  • 1000:$1.2200
  • 500:$1.2800
  • 250:$1.5100
  • 100:$1.8300
  • 10:$2.3300
  • 1:$2.8200
छवि भाग # विवरण
SIRC04DP-T1-GE3

Mfr.#: SIRC04DP-T1-GE3

OMO.#: OMO-SIRC04DP-T1-GE3

 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRC04DP

Mfr.#: SIRC04DP

OMO.#: OMO-SIRC04DP-1190

 नयाँ र मौलिक
SIRC04DP-T1-GE3

Mfr.#: SIRC04DP-T1-GE3

OMO.#: OMO-SIRC04DP-T1-GE3-VISHAY

 MOSFET N-CH 30V 60A POWERPAKSO-8
उपलब्धता
स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
SIRC04DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.६६
US$ १.६६
10
US$ १.३८
US$ १३.८०
100
US$ १.०७
US$ १०७.००
500
US$ ०.९४
US$ ४६९.५०
1000
US$ ०.७८
US$ ७७८.००
बाट सुरु गर्नुहोस्
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