SI4686DY-T1-GE3

Mfr. #:: SI4686DY-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI4686DY-T1-GE3 डाटा पाना
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HTML Datasheet:: SI4686DY-T1-GE3 Datasheet SI4686DY-T1-GE3 Datasheet (P4-P6)SI4686DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:: SI4686DY-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: SO-8

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

उचाइ:: 1.75 mm

लम्बाइ:: 4.9 mm

शृङ्खला:: SI4

चौडाइ:: 3.9 mm

ब्रान्ड:: Vishay / Siliconix

उत्पादन प्रकार:: MOSFET

कारखाना प्याक मात्रा:: 2500

उपश्रेणी:: MOSFETs

भाग # उपनाम:: SI4686DY-GE3

एकाइ वजन:: 0.006596 oz

Tags: SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4686DY-T1-GE3 मूल्याङ्कन र समीक्षाहरू

D***n

Levak of course but work

2019-02-17

S***v

It was 1,5 months, did not check, outwardly everything is fine.

2019-01-30

A***n

Everything corresponds to the declared characteristics

2019-04-03

E***l

All OK

2019-05-22

SI4686DY-T1-GE3 विवरण

***et Europe: Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R

***ment14 APAC: N CHANNEL MOSFET, 30V, 18.2A, SOIC

***ponent Sense: MOSFET SO8S N 0.0144R 30V 13A~

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes

SI4686DY-T1-GE3 थप जानकारी

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.6930
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2500In Stock	1000:$0.7648 500:$0.9687 100:$1.2491 10:$1.5810 1:$1.7800
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2500In Stock	1000:$0.7648 500:$0.9687 100:$1.2491 10:$1.5810 1:$1.7800
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5219 5000:€0.3559 10000:€0.3059 15000:€0.2829 25000:€0.2629
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6189 5000:$0.6009 10000:$0.5759 15000:$0.5599 25000:$0.5449
SI4686DY-T1-GE3 DISTI # 15R5074	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$0.6170 2500:$0.6120 5000:$0.5940 10000:$0.5720
SI4686DY-T1-GE3 DISTI # 26R1888	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$1.4900 10:$1.2300 25:$1.1300 50:$1.0400 100:$0.9410 250:$0.8750 500:$0.8090
SI4686DY-T1-GE3 DISTI # 781-SI4686DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V RoHS: Compliant	2486	1:$1.4900 10:$1.2300 100:$0.9410 500:$0.8090 1000:$0.6390 2500:$0.5960 5000:$0.5670 10000:$0.5530

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: LM339PT OMO.#: OMO-LM339PT	Analog Comparators Lo-Pwr Quad Voltage
	Mfr.#: ISL6218CVZ OMO.#: OMO-ISL6218CVZ	Switching Controllers P6 MULTIPHS BUCK PWM CNTRLR FOR IMVP4 IBM
	Mfr.#: LT3845EFE#PBF OMO.#: OMO-LT3845EFE-PBF	Switching Voltage Regulators High Voltage Synch Current Mode Step-Down Controller
	Mfr.#: LD29150DT50R OMO.#: OMO-LD29150DT50R	LDO Voltage Regulators 5.0V 1.5A Very Low
	Mfr.#: ISL6218CVZ OMO.#: OMO-ISL6218CVZ-INTERSIL	Switching Controllers P6 MULTIPHS BUCK PWM CNTRLR FOR IMVP4 IBM
	Mfr.#: LM339PT OMO.#: OMO-LM339PT-STMICROELECTRONICS	IC COMP QUAD CMOS MCRPWR 14TSSOP
	Mfr.#: LD29150DT50R OMO.#: OMO-LD29150DT50R-STMICROELECTRONICS	IC REG LINEAR 5V 1.5A DPAK

उपलब्धता

स्टक:: Available
अर्डर मा:: 1985
मात्रा प्रविष्ट गर्नुहोस्:

SI4686DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.७८~~; ~~US$ १.७८~~

10: ~~US$ १.५८~~; ~~US$ १५.८०~~

100: ~~US$ १.२४~~; ~~US$ १२४.००~~

500: ~~US$ ०.९७~~; ~~US$ ४८४.००~~

1000: ~~US$ ०.७६~~; ~~US$ ७६४.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SI4686DY-T1 3
SI4686DY-T 4
SI4686 5
SI468 35
SI46 145
SI4 2994

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