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SI9936BDY-T1-GE3

SI9936BDY-T1-GE3
Mfr. #:
SI9936BDY-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 30V 6.0A 2.0W 35mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI9936BDY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
-
प्याकेजिङ
टेप र रिल (TR)
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
FET-प्रकार
2 N-Channel (Dual)
पावर-अधिकतम
1.1W
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
4.5A
Rds-on-max-Id-Vgs
35 mOhm @ 6A, 10V
Vgs-th-max-Id
3V @ 250μA
गेट-चार्ज-Qg-Vgs
13nC @ 10V
Tags
SI9936BDY-T, SI9936BD, SI9936B, SI9936, SI993, SI99, SI9
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 4.5A 8-Pin SOIC N T/R
***nell
DUAL N CHANNEL MOSFET
***
30V, 35 MOHMS@10V, DUAL
***ment14 APAC
DUAL N CH MOSFET; Transistor Polarity:N; DUAL N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:4.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.028ohm; Rds(on) Test Voltage Vgs:4.5V
भाग # Mfg। विवरण स्टक मूल्य
SI9936BDY-T1-GE3
DISTI # SI9936BDY-T1-GE3-ND		Vishay SiliconixMOSFET 2N-CH 30V 4.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI9936BDY-T1-GE3
    DISTI # 781-SI9936BDY-GE3    		Vishay IntertechnologiesMOSFET 30V 6.0A 2.0W 35mohm @ 10V
    RoHS: Compliant    		0
      SI9936BDY-T1-GE3
      DISTI # 1871397      		Vishay IntertechnologiesDUAL N CH MOSFET
      RoHS: Compliant      		0
      • 1:$2.7900
      • 10:$2.1900
      • 50:$1.7000
      • 100:$1.4300
      • 500:$1.2300
      • 2500:$1.1600
      • 5000:$1.0800
      • 7500:$1.0200
      छवि भाग # विवरण
      SI9936BDY-T1-E3

      Mfr.#: SI9936BDY-T1-E3

      OMO.#: OMO-SI9936BDY-T1-E3

      		 MOSFET RECOMMENDED ALT 781-SI4936CDY-GE3
      SI9936BDY-T1-GE3

      Mfr.#: SI9936BDY-T1-GE3

      OMO.#: OMO-SI9936BDY-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 30V 6.0A 2.0W 35mohm @ 10V
      SI9936BDY-T1-E3

      Mfr.#: SI9936BDY-T1-E3

      OMO.#: OMO-SI9936BDY-T1-E3-VISHAY

      		 IGBT Transistors MOSFET 30V 6.0A 0.035Ohm
      SI9936BDY

      Mfr.#: SI9936BDY

      OMO.#: OMO-SI9936BDY-1190

      		 DUAL N CH MOSFET
      SI9936BDY-E3

      Mfr.#: SI9936BDY-E3

      OMO.#: OMO-SI9936BDY-E3-1190

      		 INSTOCK
      SI9936BDY-T1

      Mfr.#: SI9936BDY-T1

      OMO.#: OMO-SI9936BDY-T1-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4500
      मात्रा प्रविष्ट गर्नुहोस्:
      SI9936BDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
      बाट सुरु गर्नुहोस्
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