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IPB80N08S2-07

IPB80N08S2-07
Mfr. #:
IPB80N08S2-07
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB80N08S2-07 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB80N08S2-07 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
75 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.5 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
30 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
50 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
61 ns
सामान्य टर्न-अन ढिलाइ समय:
26 ns
भाग # उपनाम:
IPB80N08S207ATMA1 IPB8N8S27XT SP000219048
एकाइ वजन:
0.139332 oz
Tags
IPB80N08S2, IPB80N08, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB80N08S207ATMA1
DISTI # V72:2272_06383089		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		690
  • 500:$1.3559
  • 250:$1.5040
  • 100:$1.7690
  • 25:$2.2890
  • 10:$2.5550
  • 1:$3.2252
IPB80N08S207ATMA1
DISTI # V36:1790_06383089		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000:$1.3910
IPB80N08S207ATMA1
DISTI # IPB80N08S207ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.7559
IPB80N08S207ATMA1
DISTI # 31225870		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		690
  • 5:$3.2252
IPB80N08S207ATMA1
DISTI # SP000219048		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin TO-263 T/R (Alt: SP000219048)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 47000
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 1000:€1.5900
  • 2000:€1.5900
IPB80N08S207XT
DISTI # IPB80N08S207ATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N08S207ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 4000:$1.4900
  • 6000:$1.4900
  • 10000:$1.4900
  • 2000:$1.5900
  • 1000:$1.6900
IPB80N08S207ATMA1
DISTI # 49AC0286		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 75V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes890
  • 1000:$1.3300
  • 500:$1.4000
  • 250:$1.5400
  • 100:$1.8000
  • 50:$2.0600
  • 25:$2.3100
  • 10:$2.5600
  • 1:$2.9100
IPB80N08S2-07
DISTI # 726-IPB80N08S207		Infineon Technologies AGMOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
RoHS: Compliant		939
  • 1:$2.6600
  • 10:$2.2600
  • 100:$1.8100
  • 500:$1.5900
  • 1000:$1.3200
  • 2000:$1.2200
  • 5000:$1.1800
IPB80N08S207ATMA1
DISTI # 2839454		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 75V, TO-263608
  • 100:£1.3600
  • 10:£1.3900
  • 1:£1.4200
IPB80N08S207ATMA1
DISTI # 2839454		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 75V, TO-263
RoHS: Compliant		890
  • 1000:$1.8500
  • 500:$1.8900
  • 250:$1.9900
  • 100:$2.1000
  • 10:$2.3700
  • 1:$2.5400
छवि भाग # विवरण
IXDN609SIATR

Mfr.#: IXDN609SIATR

OMO.#: OMO-IXDN609SIATR

 Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
SN75C1167NSR

Mfr.#: SN75C1167NSR

OMO.#: OMO-SN75C1167NSR

 RS-422 Interface IC Dual Diff Drvr
SN75C1168NSR

Mfr.#: SN75C1168NSR

OMO.#: OMO-SN75C1168NSR

 RS-422 Interface IC Dual Diff Drvr
SN75C1167DBR

Mfr.#: SN75C1167DBR

OMO.#: OMO-SN75C1167DBR

 RS-422 Interface IC Dual Diff Drvr
SN75C1168DBR

Mfr.#: SN75C1168DBR

OMO.#: OMO-SN75C1168DBR

 RS-422 Interface IC Dual Differential Drivers and Receiver
STB6NK90ZT4

Mfr.#: STB6NK90ZT4

OMO.#: OMO-STB6NK90ZT4

 MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH
STP8NK100Z

Mfr.#: STP8NK100Z

OMO.#: OMO-STP8NK100Z

 MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A
RFD14N05L

Mfr.#: RFD14N05L

OMO.#: OMO-RFD14N05L

 MOSFET TO-251AA N-Ch Power
CD74HC08E

Mfr.#: CD74HC08E

OMO.#: OMO-CD74HC08E

 Logic Gates Quad 2-Input HS
IXDN609SIATR

Mfr.#: IXDN609SIATR

OMO.#: OMO-IXDN609SIATR-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
उपलब्धता
स्टक:
939
अर्डर मा:
2922
मात्रा प्रविष्ट गर्नुहोस्:
IPB80N08S2-07 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.६६
US$ २.६६
10
US$ २.२६
US$ २२.६०
100
US$ १.८१
US$ १८१.००
500
US$ १.५९
US$ ७९५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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