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IPB35N10S3L-26

IPB35N10S3L-26
Mfr. #:
IPB35N10S3L-26
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB35N10S3L-26 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB35N10S3L-26 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
OptiMOS-T
प्याकेजिङ
रील
अंश-उपनामहरू
IPB35N10S3L26ATMA1 IPB35N10S3L26XT SP000776044
एकाइ - वजन
0.139332 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
OptiMOS
प्याकेज-केस
TO-252-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
71 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
3 ns
उदय-समय
4 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
35 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
26.3 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
18 ns
सामान्य-टर्न-अन-डिले-समय
6 ns
Qg-गेट-चार्ज
30 nC
Tags
IPB35N10, IPB35N, IPB35, IPB3, IPB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB35N10S3L26ATMA1
DISTI # V72:2272_06384799		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		858
  • 500:$0.8098
  • 250:$0.8979
  • 100:$0.9339
  • 25:$1.1655
  • 10:$1.2365
  • 1:$1.5988
IPB35N10S3L26ATMA1
DISTI # IPB35N10S3L26ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.7091
IPB35N10S3L26ATMA1
DISTI # 33079428		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.5674
IPB35N10S3L26ATMA1
DISTI # 26195596		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		858
  • 12:$1.5988
IPB35N10S3L26ATMA1
DISTI # IPB35N10S3L26ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.5719
  • 6000:$0.5819
  • 4000:$0.6019
  • 2000:$0.6249
  • 1000:$0.6479
IPB35N10S3L26ATMA1
DISTI # SP000776044		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 (Alt: SP000776044)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€0.5919
  • 6000:€0.6319
  • 4000:€0.6949
  • 2000:€0.7779
  • 1000:€0.9969
IPB35N10S3L26ATMA1
DISTI # 34AC1657		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0203ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes2039
  • 500:$0.8650
  • 250:$0.9210
  • 100:$0.9780
  • 50:$1.0800
  • 25:$1.1700
  • 10:$1.2700
  • 1:$1.4800
IPB35N10S3L26ATMA1
DISTI # 726-IPB35N10S3L26ATM		Infineon Technologies AGMOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
RoHS: Compliant		1442
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.5990
  • 10000:$0.5770
IPB35N10S3L-26
DISTI # 726-IPB35N10S3L-26		Infineon Technologies AGMOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
RoHS: Compliant		1110
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.5990
  • 10000:$0.5770
IPB35N10S3L-26Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 35A I(D), 100V, 0.0322OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB248
  • 186:$0.7290
  • 70:$0.8100
  • 1:$1.6200
IPB35N10S3L26ATMA1
DISTI # 2781070		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-263
RoHS: Compliant		2024
  • 100:$1.2800
  • 25:$1.5700
  • 5:$1.8100
IPB35N10S3L26ATMA1
DISTI # 2781070		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-2632039
  • 500:£0.6540
  • 250:£0.6960
  • 100:£0.7380
  • 10:£1.0100
  • 1:£1.2800
छवि भाग # विवरण
IPB35N10S3L-26

Mfr.#: IPB35N10S3L-26

OMO.#: OMO-IPB35N10S3L-26

 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1

 MOSFET N-CHANNEL 100+
IPB35N10S3L26ATMA1

Mfr.#: IPB35N10S3L26ATMA1

OMO.#: OMO-IPB35N10S3L26ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH TO263-3
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL_100+
IPB35N10S3L-26

Mfr.#: IPB35N10S3L-26

OMO.#: OMO-IPB35N10S3L-26-1190

 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
IPB35N10S3L-26(3N10L26)

Mfr.#: IPB35N10S3L-26(3N10L26)

OMO.#: OMO-IPB35N10S3L-26-3N10L26--1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
IPB35N10S3L-26 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.८७
US$ ०.८७
10
US$ ०.८२
US$ ८.२२
100
US$ ०.७८
US$ ७७.९०
500
US$ ०.७४
US$ ३६७.८५
1000
US$ ०.६९
US$ ६९२.४०
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