SI3447BDV-T1-GE3

SI3447BDV-T1-GE3
Mfr. #:
SI3447BDV-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI3447BDV-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3447BDV-T1-GE3 DatasheetSI3447BDV-T1-GE3 Datasheet (P4-P6)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TSOP-6
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI3
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI3447BDV-GE3
एकाइ वजन:
0.000705 oz
Tags
SI3447BDV-T, SI3447B, SI3447, SI344, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 12V 4.5A 6-Pin TSOP T/R
***nell
P CHANNEL MOSFET, -12V, 4.5A
***ark
Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-4.5A; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI3447BDV-T1-GE3
DISTI # SI3447BDV-T1-GE3-ND
Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI3447BDV-T1-GE3
    DISTI # 26R1868
    Vishay IntertechnologiesP CHANNEL MOSFET, -12V, 4.5A,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:1V,No. of Pins:6PinsRoHS Compliant: Yes
    RoHS: Compliant
    0
      SI3447BDV-T1-GE3
      DISTI # 1871348
      Vishay IntertechnologiesP CHANNEL MOSFET, -12V, 4.5A
      RoHS: Compliant
      0
      • 1000:£0.1450
      • 500:£0.1490
      • 250:£0.2150
      • 100:£0.2480
      • 10:£0.2770
      • 1:£0.3290
      छवि भाग # विवरण
      SI3447BDV-T1-GE3

      Mfr.#: SI3447BDV-T1-GE3

      OMO.#: OMO-SI3447BDV-T1-GE3

      MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
      SI3447BDV-T1-E3

      Mfr.#: SI3447BDV-T1-E3

      OMO.#: OMO-SI3447BDV-T1-E3-VISHAY

      IGBT Transistors MOSFET 12V 5.2A 2W
      SI3447BDV

      Mfr.#: SI3447BDV

      OMO.#: OMO-SI3447BDV-1190

      नयाँ र मौलिक
      SI3447BDV-T1

      Mfr.#: SI3447BDV-T1

      OMO.#: OMO-SI3447BDV-T1-1190

      नयाँ र मौलिक
      SI3447BDV-T1-GE3

      Mfr.#: SI3447BDV-T1-GE3

      OMO.#: OMO-SI3447BDV-T1-GE3-VISHAY

      MOSFET P-CH 12V 4.5A 6-TSOP
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5500
      मात्रा प्रविष्ट गर्नुहोस्:
      SI3447BDV-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
      नवीनतम उत्पादनहरू
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