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IXFX360N15T2

IXFX360N15T2
Mfr. #:
IXFX360N15T2
निर्माता:
Littelfuse
विवरण:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFX360N15T2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IXFX360N15T2 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
IXYS
उत्पादन कोटि
FETs - एकल
शृङ्खला
GigaMOS
उत्पादन
MOSFET गेट चालकहरू
टाइप गर्नुहोस्
GigaMOS Trench T2 HiperFet
प्याकेजिङ
ट्यूब
माउन्टिङ-शैली
प्वाल मार्फत
ट्रेडनेम
HiPerFET
प्याकेज-केस
PLUS-247
सञ्चालन - तापक्रम
-55°C ~ 175°C (TJ)
माउन्टिङ-प्रकार
प्वाल मार्फत
आपूर्तिकर्ता-उपकरण-प्याकेज
PLUS247-3
आउटपुटहरूको संख्या
1
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
1670W
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
150V
इनपुट-Capacitance-Ciss-Vds
47500pF @ 25V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
360A (Tc)
Rds-on-max-Id-Vgs
4 mOhm @ 60A, 10V
Vgs-th-max-Id
5V @ 8mA
गेट-चार्ज-Qg-Vgs
715nC @ 10V
Pd-शक्ति-डिसिपेशन
1670 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
आउटपुट-भोल्टेज
150 V
सञ्चालन-आपूर्ति-वर्तमान
100 A
आउटपुट-वर्तमान
360 A
पतन-समय
265 ns
उदय-समय
170 ns
चालकहरूको संख्या
1 Driver
अधिकतम-टर्न-अफ-ढिलाइ-समय
115 ns
अधिकतम-टर्न-अन-डिले-समय
50 ns
Tags
IXFX3, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 150V 360A PLUS247
***ure Electronics
150V 360A 0.004 Ohm N-Ch PLUS247 HiperFET
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
भाग # Mfg। विवरण स्टक मूल्य
IXFX360N15T2
DISTI # V99:2348_15878492		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 500:$12.8800
  • 250:$14.6000
  • 100:$16.8000
  • 50:$17.2300
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # IXFX360N15T2-ND		IXYS CorporationMOSFET N-CH 150V 360A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 120:$18.3707
  • 30:$19.7660
  • 1:$23.2500
IXFX360N15T2
DISTI # 30695442		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # 747-IXFX360N15T2		IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		73
  • 1:$24.3100
  • 5:$23.7600
  • 10:$22.4900
  • 25:$21.1400
  • 50:$19.5600
  • 100:$19.2100
  • 250:$16.3800
  • 500:$14.2700
IXFX360N15T2
DISTI # C1S331700117829		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
छवि भाग # विवरण
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2-IXYS-CORPORATION

 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T-IXYS-CORPORATION

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
IXFX360N15T2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १९.३२
US$ १९.३२
10
US$ १८.३५
US$ १८३.५४
100
US$ १७.३९
US$ १ ७३८.८०
500
US$ १६.४२
US$ ८ २११.००
1000
US$ १५.४६
US$ १५ ४५६.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
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