SI1012X-T1-GE3

SI1012X-T1-GE3
Mfr. #:
SI1012X-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI1012X-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1012X-T1-GE3 DatasheetSI1012X-T1-GE3 Datasheet (P4-P6)SI1012X-T1-GE3 Datasheet (P7-P8)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SC-89-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
आईडी - निरन्तर ड्रेन वर्तमान:
600 mA
Rds अन - ड्रेन-स्रोत प्रतिरोध:
700 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
450 mV
Vgs - गेट-स्रोत भोल्टेज:
4.5 V
Qg - गेट चार्ज:
750 pC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
275 mW
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
0.8 mm
लम्बाइ:
1.6 mm
शृङ्खला:
SI1
ट्रान्जिस्टर प्रकार:
1 N Channel
चौडाइ:
0.85 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
1 S
पतन समय:
11 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
5 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
5 ns
भाग # उपनाम:
SI1012X-GE3
एकाइ वजन:
0.001058 oz
Tags
SI1012X-T1, SI1012X-T, SI1012X, SI1012, SI101, SI10, SI1
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ohm; ID 500mA; SC-89 (SOT-490); Halogeenfree
***ure Electronics
Single N-Channel 20 V 0.7 Ohm Surface Mount Power Mosfet - SC-89
***ment14 APAC
N CHANNEL MOSFET, 20V, 500mA, SC-89; Tra; N CHANNEL MOSFET, 20V, 500mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:6V; Threshold Voltage Vgs:900mV
भाग # Mfg। विवरण स्टक मूल्य
SI1012X-T1-GE3
DISTI # V72:2272_09215334
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant
994
  • 500:$0.2064
  • 250:$0.2641
  • 100:$0.2717
  • 10:$0.4198
  • 1:$0.5414
SI1012X-T1-GE3
DISTI # V36:1790_09215334
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant
0
  • 3000:$0.1500
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
48000In Stock
  • 75000:$0.1075
  • 30000:$0.1117
  • 15000:$0.1218
  • 6000:$0.1302
  • 3000:$0.1386
SI1012X-T1-GE3
DISTI # 25789785
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant
994
  • 42:$0.5414
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1299
  • 18000:€0.1389
  • 12000:€0.1509
  • 6000:€0.1749
  • 3000:€0.2569
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI1012X-T1-GE3
    DISTI # SI1012X-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R - Tape and Reel (Alt: SI1012X-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1209
    • 18000:$0.1239
    • 12000:$0.1269
    • 6000:$0.1329
    • 3000:$0.1369
    SI1012X-T1-GE3
    DISTI # 16P3669
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89,Transistor Polarity:N Channel,Continuous Drain Current Id:600mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV RoHS Compliant: Yes0
    • 1000:$0.1840
    • 500:$0.2370
    • 250:$0.2630
    • 100:$0.2890
    • 50:$0.3390
    • 25:$0.3900
    • 1:$0.5050
    SI1012X-T1-GE3.
    DISTI # 26AC3307
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:500mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV,Power Dissipation Pd:250mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.1240
    • 18000:$0.1280
    • 12000:$0.1310
    • 6000:$0.1370
    • 1:$0.1410
    SI1012X-T1-GE3
    DISTI # 70026402
    Vishay SiliconixMOSFET,Power,N-Ch,VDSS 20V,RDS(ON) 0.41Ohm,ID 500mA,SC-89 (SOT-490),Halogeenfree
    RoHS: Compliant
    0
    • 3000:$0.2200
    • 6000:$0.2030
    • 12000:$0.1950
    SI1012X-T1-GE3
    DISTI # 781-SI1012X-T1-GE3
    Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
    RoHS: Compliant
    3158
    • 1:$0.5000
    • 10:$0.3860
    • 100:$0.2860
    • 500:$0.2350
    • 1000:$0.1820
    • 3000:$0.1660
    • 6000:$0.1550
    • 9000:$0.1450
    • 24000:$0.1370
    SI1012XT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    3000
      SI1012X-T1-GE3
      DISTI # 1690182
      Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89
      RoHS: Compliant
      0
      • 1000:$0.2350
      • 500:$0.3130
      • 20:$0.4180
      SI1012X-T1-GE3Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
      RoHS: Compliant
      Americas - 6000
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