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SGS10N60RUFDTU

SGS10N60RUFDTU
Mfr. #:
SGS10N60RUFDTU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors 600V/10A/w/FRD
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SGS10N60RUFDTU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
E
प्रविधि:
सि
प्याकेज / केस:
TO-220-3 FP
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.2 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
16 A
Pd - शक्ति अपव्यय:
55 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
SGS10N60RUFD
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
16 A
उचाइ:
9.19 mm
लम्बाइ:
10.16 mm
चौडाइ:
4.7 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
16 A
गेट-एमिटर चुहावट वर्तमान:
+/- 100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
IGBTs
भाग # उपनाम:
SGS10N60RUFDTU_NL
एकाइ वजन:
0.080072 oz
Tags
SGS10N60RUFD, SGS10N60RUF, SGS10N60R, SGS10N, SGS10, SGS1, SGS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
***emi
IGBT, 600V, 10A, Short Circuit Rated
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IGBT 600V 16A 55W Through Hole TO-220F
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi SGS10N60RUFDTU
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 600V/10A/w/FRD
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***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
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Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***et
IGBT 600V 14A 45W Through Hole TO-220F
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***trelec
IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 180 ns Power dissipation: 45 W
***ment14 APAC
IGBT, 600V, 17A, TO-220FP; Transistor Type:IGBT; DC Collector Current:17A; Collector Emitter Voltage Vces:1.95V; Power Dissipation Pd:45W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:17A; Current Temperature:25°C; Fall Time Max:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:45W; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulsed Current Icm:92A; Rise Time:21ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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600V Low-Vceon Copack IGBT in a TO-220 FullPak package
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The 5th generation of ultrafast 600 V, 15 A IGBT in a TO-220 Full-Pak package co-packed with a low Vf diode has been optimized for lower conduction losses, FULLPAK220-3COPAK, RoHS
***ment14 APAC
IGBT, TO-220FP; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:52W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:19A; Package / Case:TO-220FP; Power Dissipation Max:52W; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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600V LOW-VCEON COPACK IGBT IN A TO-220 FULLPAK PACKAGE | Infineon IRGIB7B60KDPBF
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IGBT, 600V, 12A, TO-220FP; Transistor Type:IGBT; DC Collector Current:12A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:39W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:12A; Fall Time Max:42ns; Fall Time tf:42ns; Package / Case:TO-220FP; Power Dissipation Max:39W; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulsed Current Icm:24A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
भाग # Mfg। विवरण स्टक मूल्य
SGS10N60RUFDTU
DISTI # V36:1790_06359716		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Rail60
  • 1000:$1.1303
  • 500:$1.3832
  • 100:$1.5490
  • 10:$1.9719
  • 1:$2.5444
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU-ND		ON SemiconductorIGBT 600V 16A 55W TO220F
RoHS: Compliant
Min Qty: 1
Container: Tube		1030In Stock
  • 5000:$1.1144
  • 3000:$1.1283
  • 1000:$1.2119
  • 100:$1.7803
  • 25:$2.0896
  • 10:$2.2150
  • 1:$2.4700
SGS10N60RUFDTU
DISTI # 30149013		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Rail60
  • 1000:$1.2151
  • 500:$1.4869
  • 100:$1.6652
  • 10:$2.1198
  • 8:$2.4866
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail (Alt: SGS10N60RUFDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8589
  • 500:€0.8909
  • 100:€0.9259
  • 50:€0.9629
  • 25:€1.0029
  • 10:€1.0939
  • 1:€1.2029
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: SGS10N60RUFDTU)
RoHS: Compliant
Min Qty: 224
Container: Bulk		Americas - 0
  • 2240:$1.2900
  • 224:$1.3900
  • 448:$1.3900
  • 672:$1.3900
  • 1120:$1.3900
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: SGS10N60RUFDTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.8799
  • 5000:$0.9019
  • 3000:$0.9139
  • 2000:$0.9249
  • 1000:$0.9309
SGS10N60RUFDTU
DISTI # 83C0939		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,16A I(C),TO-220AB(FP) ROHS COMPLIANT: YES0
  • 10000:$1.0900
  • 2500:$1.1400
  • 1000:$1.2400
  • 500:$1.4800
  • 100:$1.6800
  • 10:$2.0700
  • 1:$2.5400
SGS10N60RUFDTU
DISTI # 512-SGS10N60RUFDTU		ON SemiconductorIGBT Transistors 600V/10A/w/FRD
RoHS: Compliant		700
  • 1:$2.3400
  • 10:$1.9900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
SGS10N60RUFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant		96023
  • 1000:$1.4700
  • 500:$1.5500
  • 100:$1.6200
  • 25:$1.6800
  • 1:$1.8100
SGS10N60RUFDTU
DISTI # XSKDRABV0038967		ON SEMICONDUCTORSIDACtor Protection Thyristor SYM 3Chp 420V 50A
RoHS: Compliant		800 in Stock0 on Order
  • 800:$1.3000
  • 360:$1.3900
छवि भाग # विवरण
SGS10N60RUFDTU

Mfr.#: SGS10N60RUFDTU

OMO.#: OMO-SGS10N60RUFDTU

 IGBT Transistors 600V/10A/w/FRD
SGS10N60RUFTU

Mfr.#: SGS10N60RUFTU

OMO.#: OMO-SGS10N60RUFTU

 Motor / Motion / Ignition Controllers & Drivers 600V/10A
SGS10N60

Mfr.#: SGS10N60

OMO.#: OMO-SGS10N60-1190

 नयाँ र मौलिक
SGS10N60RU

Mfr.#: SGS10N60RU

OMO.#: OMO-SGS10N60RU-1190

 नयाँ र मौलिक
SGS10N60RUF

Mfr.#: SGS10N60RUF

OMO.#: OMO-SGS10N60RUF-1190

 नयाँ र मौलिक
SGS10N60RUFD

Mfr.#: SGS10N60RUFD

OMO.#: OMO-SGS10N60RUFD-1190

 नयाँ र मौलिक
SGS10N60RUFDTU(SG)

Mfr.#: SGS10N60RUFDTU(SG)

OMO.#: OMO-SGS10N60RUFDTU-SG--1190

 नयाँ र मौलिक
SGS10N60RUFTU

Mfr.#: SGS10N60RUFTU

OMO.#: OMO-SGS10N60RUFTU-ON-SEMICONDUCTOR

 IGBT 600V 16A 55W TO220F
SGS10N60RUFDTU

Mfr.#: SGS10N60RUFDTU

OMO.#: OMO-SGS10N60RUFDTU-ON-SEMICONDUCTOR

 IGBT Transistors 600V/10A/w/FRD
उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
SGS10N60RUFDTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.३४
US$ २.३४
10
US$ १.९९
US$ १९.९०
100
US$ १.५९
US$ १५९.००
500
US$ १.३९
US$ ६९५.००
1000
US$ १.१५
US$ १ १५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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