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APT84M50B2

APT84M50B2
Mfr. #:
APT84M50B2
निर्माता:
Microchip / Microsemi
विवरण:
MOSFET FG, MOSFET, 500V, TO-247 T-MAX
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
APT84M50B2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
T-MAX-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
500 V
आईडी - निरन्तर ड्रेन वर्तमान:
84 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
65 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
340 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
1.135 kW
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
65 S
पतन समय:
50 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
70 ns
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
155 ns
सामान्य टर्न-अन ढिलाइ समय:
60 ns
Tags
APT8, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 500V 84A 3-Pin(3+Tab) T-MAX
***rochip
MOSFET MOS8 500 V 84 A TO-247 MAX
*** Stop Electro
Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
500V, 84A, 0.065 OHM, T-MAX PKG
छवि भाग # विवरण
APT84M50B2

Mfr.#: APT84M50B2

OMO.#: OMO-APT84M50B2

 MOSFET FG, MOSFET, 500V, TO-247 T-MAX
APT84F50B2

Mfr.#: APT84F50B2

OMO.#: OMO-APT84F50B2

 MOSFET FG, FREDFET, 500V, TO-247 T-MAX
उपलब्धता
स्टक:
18
अर्डर मा:
2001
मात्रा प्रविष्ट गर्नुहोस्:
APT84M50B2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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