SIHB24N65E-E3

SIHB24N65E-E3
Mfr. #:
SIHB24N65E-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB24N65E-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHB24N65E-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
700 V
आईडी - निरन्तर ड्रेन वर्तमान:
24 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
145 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
81 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
250 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
शृङ्खला:
E
चौडाइ:
9.65 mm
ब्रान्ड:
Vishay / Siliconix
पतन समय:
69 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
84 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
70 ns
सामान्य टर्न-अन ढिलाइ समय:
24 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB24, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***a
    A***a
    UA

    Order received. Very good.

    2019-05-05
    V***v
    V***v
    RU

    Leds received on april 6, ordered on january 30, 2019. Packed well.

    2019-04-09
    S***v
    S***v
    RU

    Not tested. The tester is delayed.

    2019-03-04
    N***m
    N***m
    UA

    Good seller. Sender fast, consistent description. Good seller. By sending shvidko, all will be sent back to the description. Delivery 24 days.

    2019-03-20
***ark
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***et Europe
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***Components
MOSFET N-Channel 650V 24A D2PAK
***i-Key
MOSFET N-CH 650V 24A D2PAK
***ment14 APAC
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Voltage Vgs Max:30V
***nell
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB24N65E-E3
DISTI # V36:1790_09219019
Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
0
  • 1000000:$2.9040
  • 500000:$2.9060
  • 100000:$2.9880
  • 10000:$3.1120
  • 1000:$3.1310
SIHB24N65E-E3
DISTI # SIHB24N65E-E3-ND
Vishay SiliconixMOSFET N-CH 650V 24A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$3.1311
SIHB24N65E-E3
DISTI # SIHB24N65E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB24N65E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$2.6900
  • 4000:$2.7900
  • 6000:$2.7900
  • 2000:$2.9900
  • 1000:$3.0900
SIHB24N65E-GE3
DISTI # 78-SIHB24N65E-GE3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
2950
  • 1:$5.9600
  • 10:$4.9400
  • 100:$4.0600
  • 250:$3.9400
  • 500:$3.5300
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-E3
DISTI # 781-SIHB24N65E-E3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
0
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
  • 10:$3.8640
छवि भाग # विवरण
IRLML2502TRPBF

Mfr.#: IRLML2502TRPBF

OMO.#: OMO-IRLML2502TRPBF

MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl
BTS50085-1TMA

Mfr.#: BTS50085-1TMA

OMO.#: OMO-BTS50085-1TMA

Power Switch ICs - Power Distribution SMART HI SIDE HI CURRENT PWR SWITCH
BTS500851TMBAKSA1

Mfr.#: BTS500851TMBAKSA1

OMO.#: OMO-BTS500851TMBAKSA1

Power Switch ICs - Power Distribution SMART HI SIDE HI HI CURRNT PWR SWITCH
IRLML2502TRPBF

Mfr.#: IRLML2502TRPBF

OMO.#: OMO-IRLML2502TRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 20V 4.2A SOT-23
BTS500851TMBAKSA1

Mfr.#: BTS500851TMBAKSA1

OMO.#: OMO-BTS500851TMBAKSA1-INFINEON-TECHNOLOGIES

Power Switch ICs - Power Distribution SMART HI SIDE HI HI CURRNT PWR SWITCH
BTS50085-1TMA

Mfr.#: BTS50085-1TMA

OMO.#: OMO-BTS50085-1TMA-270

Power Switch ICs - Power Distribution SMART HI SIDE HI CURRENT PWR SWITCH
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
SIHB24N65E-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1000
US$ २.९८
US$ २ ९८०.००
2000
US$ २.८३
US$ ५ ६६०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • Compare SIHB24N65E-E3
    SIHB24N65E vs SIHB24N65EE3 vs SIHB24N65EGE3
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
Top