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SI2301BDS-T1-GE3

SI2301BDS-T1-GE3
Mfr. #:
SI2301BDS-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2301BDS-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2301BDS-T1-GE3 DatasheetSI2301BDS-T1-GE3 Datasheet (P4-P6)SI2301BDS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SI2301BDS-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-23-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
2.2 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
100 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
450 mV
Vgs - गेट-स्रोत भोल्टेज:
4.5 V
Qg - गेट चार्ज:
4.5 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
0.7 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.45 mm
लम्बाइ:
2.9 mm
शृङ्खला:
SI2
ट्रान्जिस्टर प्रकार:
1 P-Channel
चौडाइ:
1.6 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
6.5 S
पतन समय:
20 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
40 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
30 ns
सामान्य टर्न-अन ढिलाइ समय:
20 ns
भाग # उपनाम:
SI2301BDS-GE3
एकाइ वजन:
0.000282 oz
Tags
SI2301BDS-T1, SI2301BDS-T, SI2301BD, SI2301B, SI2301, SI230, SI23, SI2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
***et Europe
Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 20V 2.2A SOT23-3
***ure Electronics
P-CHANNEL 2.5-V (G-S) MOSFET
***nell
P CHANNEL MOSFET
***ark
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW ;RoHS Compliant: Yes
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
भाग # Mfg। विवरण स्टक मूल्य
SI2301BDS-T1-GE3
DISTI # V72:2272_09216783		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
  • 1:$0.4180
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.1875
SI2301BDS-T1-GE3
DISTI # 28976274		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 57:$0.2847
SI2301BDS-T1-GE3
DISTI # 84R8020		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Power Dissipation Pd:700mW, RoHS Compliant: Yes0
  • 1:$0.4400
  • 25:$0.3330
  • 50:$0.2910
  • 100:$0.2480
  • 250:$0.2260
  • 500:$0.2030
  • 1000:$0.1570
SI2301BDS-T1-GE3
DISTI # 33P5162		Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Product Range:-, RoHS Compliant: Yes0
  • 1:$0.1630
  • 3000:$0.1620
  • 6000:$0.1540
  • 12000:$0.1370
SI2301BDS-T1-GE3
DISTI # 781-SI2301BDS-GE3		Vishay IntertechnologiesMOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
RoHS: Compliant		10356
  • 1:$0.4400
  • 10:$0.3330
  • 100:$0.2480
  • 500:$0.2030
  • 1000:$0.1570
  • 3000:$0.1430
  • 6000:$0.1340
  • 9000:$0.1250
SI2301BDS-T1-GE3
DISTI # 1867173		Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant		0
  • 3000:£0.1390
SI2301BDS-T1-GE3
DISTI # C1S803601819123		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
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उपलब्धता
स्टक:
12
अर्डर मा:
1995
मात्रा प्रविष्ट गर्नुहोस्:
SI2301BDS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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