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SIHD6N62E-GE3

SIHD6N62E-GE3
Mfr. #:
SIHD6N62E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 620V Vds 30V Vgs DPAK (TO-252)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHD6N62E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD6N62E-GE3 DatasheetSIHD6N62E-GE3 Datasheet (P4-P6)SIHD6N62E-GE3 Datasheet (P7-P9)SIHD6N62E-GE3 Datasheet (P10)
ECAD Model:
थप जानकारी:
SIHD6N62E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
620 V
आईडी - निरन्तर ड्रेन वर्तमान:
6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
900 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
17 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
78 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
थोक
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
16 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
एकाइ वजन:
0.050717 oz
Tags
SIHD6N62, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 620 V 900 mO 34 nC Surface Mount Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin DPAK
***i-Key
MOSFET N-CH 620V 6A TO-252
***ark
N-CHANNEL 620V
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 620V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 620V, 6A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:620V; Resistenza di Attivazione Rds(on):0.78ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:78W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHD6N62E-GE3
DISTI # 31638809		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
SIHD6N62E-GE3
DISTI # V99:2348_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
  • 1:$1.5349
SIHD6N62E-GE3
DISTI # V36:1790_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.6417
  • 1500000:$0.6446
  • 300000:$0.9259
  • 30000:$1.4340
  • 3000:$1.5200
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3-ND		Vishay SiliconixMOSFET N-CH 620V 6A TO-252
Min Qty: 1
Container: Tube		3090In Stock
  • 5000:$0.6259
  • 2500:$0.6588
  • 500:$0.8941
  • 100:$1.0824
  • 25:$1.3176
  • 10:$1.3880
  • 1:$1.5500
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK (Alt: SIHD6N62E-GE3)
Min Qty: 3000		Europe - 0
  • 30000:€0.5529
  • 18000:€0.5779
  • 12000:€0.6539
  • 6000:€0.8069
  • 3000:€1.1249
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK - Tape and Reel (Alt: SIHD6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6029
  • 18000:$0.6199
  • 12000:$0.6369
  • 6000:$0.6639
  • 3000:$0.6849
SIHD6N62E-GE3
DISTI # 78-SIHD6N62E-GE3		Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		4048
  • 1:$1.5500
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.8940
  • 1000:$0.6580
  • 3000:$0.6250
  • 9000:$0.6020
SIHD6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas -
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		0
    • 5025:$0.9840
    • 2550:$1.0400
    • 525:$1.4100
    • 150:$1.7100
    • 75:$2.0700
    • 10:$2.1900
    • 1:$2.4400
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		10
    • 5000:£0.5420
    • 1000:£0.5710
    • 500:£0.6830
    • 250:£0.7380
    • 100:£0.7930
    • 10:£1.0800
    • 1:£1.4200
    छवि भाग # विवरण
    DZT5551-13

    Mfr.#: DZT5551-13

    OMO.#: OMO-DZT5551-13

    		 Bipolar Transistors - BJT 1000mW 160Vceo
    FDN5618P

    Mfr.#: FDN5618P

    OMO.#: OMO-FDN5618P

    		 MOSFET SSOT-3 P-CH 60V
    ATP108-TL-H

    Mfr.#: ATP108-TL-H

    OMO.#: OMO-ATP108-TL-H

    		 MOSFET SWITCHING DEVICE
    1N5819HW-7-F

    Mfr.#: 1N5819HW-7-F

    OMO.#: OMO-1N5819HW-7-F

    		 Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
    KTR25JZPF1603

    Mfr.#: KTR25JZPF1603

    OMO.#: OMO-KTR25JZPF1603

    		 Thick Film Resistors - SMD 1210 160Kohm 1% High Voltage
    PLA170STR

    Mfr.#: PLA170STR

    OMO.#: OMO-PLA170STR

    		 Solid State Relays - PCB Mount Single-Pole Relay 800V 100mA
    KTR25JZPF1005

    Mfr.#: KTR25JZPF1005

    OMO.#: OMO-KTR25JZPF1005-ROHM-SEMI

    		 RES SMD 10M OHM 1% 1/3W 1210
    KTR25JZPF1603

    Mfr.#: KTR25JZPF1603

    OMO.#: OMO-KTR25JZPF1603-ROHM-SEMI

    		 RES SMD 160K OHM 1% 1/3W 1210
    KTR25JZPF4703

    Mfr.#: KTR25JZPF4703

    OMO.#: OMO-KTR25JZPF4703-ROHM-SEMI

    		 RES SMD 470K OHM 1% 1/3W 1210
    XF2M-4015-1A

    Mfr.#: XF2M-4015-1A

    OMO.#: OMO-XF2M-4015-1A-OMRON

    		 FFC & FPC Connectors .5mm Rotary BackLock SMT Dual 40P Adhesv.
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1987
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHD6N62E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.६४
    US$ १.६४
    10
    US$ १.३५
    US$ १३.५०
    100
    US$ १.०४
    US$ १०४.००
    500
    US$ ०.८९
    US$ ४४७.००
    1000
    US$ ०.७०
    US$ ७०५.००
    3000
    US$ ०.६६
    US$ १ ९७४.००
    6000
    US$ ०.६२
    US$ ३ ७५०.००
    9000
    US$ ०.६०
    US$ ५ ४१८.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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