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FCAB21350L1

FCAB21350L1
Mfr. #:
FCAB21350L1
निर्माता:
Panasonic
विवरण:
MOSFET Wide Pad Dual Nchannel MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FCAB21350L1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
FCAB21350L1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
Panasonic
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
12 V
आईडी - निरन्तर ड्रेन वर्तमान:
12 A, 27 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.1 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
350 mV
Vgs - गेट-स्रोत भोल्टेज:
8 V
Qg - गेट चार्ज:
48 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
450 mW, 2.1 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
FCAB
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Panasonic
पतन समय:
5 us
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
2.3 us
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
9 us
सामान्य टर्न-अन ढिलाइ समय:
1.2 us
Tags
FCAB21, FCAB, FCA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***enic
SMD-6 Power Distribution Switches ROHS
***NGYU ELECTRONICS
GATE RESISTOR INTEGRATED DUAL NC
***i-Key
IC PWR DRIVER N-CHANNEL 1:1 6SMD
Power CSP MOSFETs
Panasonic Power CSP MOSFETs feature a unique Power Mount CSP package that allows for a 5% improvement in thermal dissipation while reducing the size by 80% over conventional solutions. The package structure consists of a unique pad design and drain clip technology for higher thermal performance. These Panasonic power MOSFET transistors employ a fine trench silicon technology that provides a 47% lower RDS(on) over the same-sized conventional chip. These Power CSP MOSFETs are optimized for load switches that combine low RDS(on) in a smaller form factor. The devices are also an ideal fit for Li-Ion battery applications in which low RDS(on) is necessary.
भाग # Mfg। विवरण स्टक मूल्य
FCAB21350L1
DISTI # P18976CT-ND		Panasonic Electronic ComponentsGATE RESISTOR INTEGRATED DUAL NC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		707In Stock
  • 500:$0.8568
  • 100:$1.1048
  • 10:$1.3980
  • 1:$1.5800
FCAB21350L1
DISTI # P18976DKR-ND		Panasonic Electronic ComponentsGATE RESISTOR INTEGRATED DUAL NC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		707In Stock
  • 500:$0.8568
  • 100:$1.1048
  • 10:$1.3980
  • 1:$1.5800
FCAB21350L1
DISTI # P18976TR-ND		Panasonic Electronic ComponentsGATE RESISTOR INTEGRATED DUAL NC
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.5823
  • 2000:$0.6129
  • 1000:$0.6567
FCAB21350L1
DISTI # 667-FCAB21350L1		Panasonic Electronic ComponentsMOSFET Wide Pad Dual Nchannel MOSFET
RoHS: Compliant		990
  • 1:$1.7400
  • 10:$1.5400
  • 100:$1.2200
  • 500:$0.9430
  • 1000:$0.7230
  • 2000:$0.6480
  • 10000:$0.5930
FCAB21350L1Panasonic Electronic ComponentsMOSFET Wide Pad Dual Nchannel MOSFET
RoHS: Compliant		Americas -
    छवि भाग # विवरण
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    उपलब्धता
    स्टक:
    990
    अर्डर मा:
    2973
    मात्रा प्रविष्ट गर्नुहोस्:
    FCAB21350L1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.७४
    US$ १.७४
    10
    US$ १.५४
    US$ १५.४०
    100
    US$ १.२२
    US$ १२२.००
    500
    US$ ०.९४
    US$ ४७१.५०
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