IPB70N10S3-12

IPB70N10S3-12
Mfr. #:
IPB70N10S3-12
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB70N10S3-12 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB70N10S3-12 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
70 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
9.4 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
66 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS-T
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns
भाग # उपनाम:
IPB70N10S312ATMA1 IPB7N1S312XT SP000261246
एकाइ वजन:
0.139332 oz
Tags
IPB70N10S3-1, IPB70N10S3, IPB70N10S, IPB70N10, IPB70N1, IPB70N, IPB70, IPB7, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB70N10S312ATMA1
DISTI # V72:2272_06384093
Infineon Technologies AGTrans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
771
  • 500:$0.9893
  • 250:$1.1150
  • 100:$1.1257
  • 25:$1.2883
  • 10:$1.3886
  • 1:$1.8115
IPB70N10S312ATMA1
DISTI # V36:1790_06384093
Infineon Technologies AGTrans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.7455
  • 500000:$0.7459
  • 100000:$0.7823
  • 10000:$0.8507
  • 1000:$0.8623
IPB70N10S312ATMA1
DISTI # IPB70N10S312ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 70A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
900In Stock
  • 500:$1.0720
  • 100:$1.3048
  • 10:$1.6230
  • 1:$1.8100
IPB70N10S312ATMA1
DISTI # IPB70N10S312ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 70A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
900In Stock
  • 500:$1.0720
  • 100:$1.3048
  • 10:$1.6230
  • 1:$1.8100
IPB70N10S312ATMA1
DISTI # IPB70N10S312ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 70A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 10000:$0.7533
  • 5000:$0.7731
  • 2000:$0.8029
  • 1000:$0.8623
IPB70N10S312ATMA1
DISTI # 26195351
Infineon Technologies AGTrans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
771
  • 8:$1.8115
IPB70N10S312XT
DISTI # IPB70N10S312ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB70N10S312ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8129
  • 6000:$0.8269
  • 4000:$0.8559
  • 2000:$0.8879
  • 1000:$0.9219
IPB70N10S312ATMA1
DISTI # 50Y2015
Infineon Technologies AGMOSFET Transistor, N Channel, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V RoHS Compliant: Yes800
  • 500:$1.0000
  • 250:$1.0700
  • 100:$1.1400
  • 50:$1.2400
  • 25:$1.3300
  • 10:$1.4200
  • 1:$1.6800
IPB70N10S312ATMA1
DISTI # 726-IPB70N10S312ATMA
Infineon Technologies AGMOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
RoHS: Compliant
923
  • 1:$1.8800
  • 10:$1.6000
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9270
  • 2000:$0.8640
  • 5000:$0.8320
  • 10000:$0.8000
IPB70N10S3-12
DISTI # 726-IPB70N10S312
Infineon Technologies AGMOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
RoHS: Compliant
755
  • 1:$1.6600
  • 10:$1.4100
  • 100:$1.1300
  • 500:$0.9920
  • 1000:$0.8220
  • 2000:$0.7650
  • 5000:$0.7370
  • 10000:$0.7080
IPB70N10S312ATMA1
DISTI # XSKDRABV0052158
Infineon Technologies AG 
RoHS: Compliant
3000 in Stock0 on Order
  • 3000:$1.1500
  • 1000:$1.2300
IPB70N10S312ATMA1
DISTI # 2480810
Infineon Technologies AGMOSFET, N-CH, 100V, 70A, TO263773
  • 500:£0.7190
  • 250:£0.7700
  • 100:£0.8190
  • 25:£1.0200
  • 5:£1.1700
IPB70N10S312ATMA1
DISTI # 2480810RL
Infineon Technologies AGMOSFET, N-CH, 100V, 70A, TO263
RoHS: Compliant
0
  • 500:$1.4900
  • 100:$1.7000
  • 10:$2.1200
  • 1:$2.5000
IPB70N10S312ATMA1
DISTI # 2480810
Infineon Technologies AGMOSFET, N-CH, 100V, 70A, TO263
RoHS: Compliant
700
  • 500:$1.4900
  • 100:$1.7000
  • 10:$2.1200
  • 1:$2.5000
छवि भाग # विवरण
VNS1NV04DP-E

Mfr.#: VNS1NV04DP-E

OMO.#: OMO-VNS1NV04DP-E

Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
NTD5C648NLT4G

Mfr.#: NTD5C648NLT4G

OMO.#: OMO-NTD5C648NLT4G

MOSFET T6 60V LL DPAK
FQB55N10TM

Mfr.#: FQB55N10TM

OMO.#: OMO-FQB55N10TM

MOSFET 100V N-Channel QFET
CSD17579Q3AT

Mfr.#: CSD17579Q3AT

OMO.#: OMO-CSD17579Q3AT

MOSFET 30V NCh NexFET Pwr MOSFET
5002

Mfr.#: 5002

OMO.#: OMO-5002

Circuit Board Hardware - PCB TEST POINT WHITE .040
FQB55N10TM

Mfr.#: FQB55N10TM

OMO.#: OMO-FQB55N10TM-ON-SEMICONDUCTOR

MOSFET N-CH 100V 55A D2PAK
MPZ2012S601A

Mfr.#: MPZ2012S601A

OMO.#: OMO-MPZ2012S601A-1158

EMI Filter Beads, Chips & Arrays Ferrite Chip Beads
MMZ1608B601C

Mfr.#: MMZ1608B601C

OMO.#: OMO-MMZ1608B601C-1158

EMI Filter Beads, Chips & Arrays Ferrite Chip Beads
ABM8G-13.000MHZ-18-D2Y-T

Mfr.#: ABM8G-13.000MHZ-18-D2Y-T

OMO.#: OMO-ABM8G-13-000MHZ-18-D2Y-T-ABRACON

Crystals 13.000MHz 18pF 30ppm -40C +85C
CSD17579Q3AT

Mfr.#: CSD17579Q3AT

OMO.#: OMO-CSD17579Q3AT-TEXAS-INSTRUMENTS

IGBT Transistors MOSFET 30V NCh NexFET Pwr MOSFET
उपलब्धता
स्टक:
755
अर्डर मा:
2738
मात्रा प्रविष्ट गर्नुहोस्:
IPB70N10S3-12 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.६६
US$ १.६६
10
US$ १.४१
US$ १४.१०
100
US$ १.१३
US$ ११३.००
500
US$ ०.९९
US$ ४९६.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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