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BSM300D12P2E001

BSM300D12P2E001
Mfr. #:
BSM300D12P2E001
निर्माता:
Rohm Semiconductor
विवरण:
MOSFET 2N-CH 1200V 300A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSM300D12P2E001 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSM300D12P2E001 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
BSM300, BSM30, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C ROHM BSM300D12P2E001
***p One Stop Japan
Trans MOSFET N-CH 1.2KV 300A Automotive 11-Pin Tray
***et Europe
Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 300A 11-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
***i-Key
MOSFET 2N-CH 1200V 300A
***ronik
SICDMOS 1200V 300A 1.6V Modul
***
300A SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
BSM300D12P2E001 SiC Power Module
ROHM BSM300D12P2E001 SiC Power Module is a half bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. It's designed for Motor Drives, Inverter/Converters, Photovoltaics, energy harvesting and induction heating equipment. It has low surge, low switching loss and high-speed switching is possible.
भाग # Mfg। विवरण स्टक मूल्य
BSM300D12P2E001
DISTI # BSM300D12P2E001-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 300A
RoHS: Compliant
Min Qty: 1
Container: Tray		6In Stock
  • 1:$663.0800
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1:€638.5900
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray - Bulk (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 4
Container: Bulk		Americas - 0
    BSM300D12P2E001
    DISTI # 755-BSM300D12P2E001    		ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		46
    • 1:$639.4400
    • 5:$600.9100
    BSM300D12P2E001ROHM Semiconductor 3
    • 4:$885.8400
    • 2:$941.2050
    • 1:$968.8875
    BSM300D12P2E001
    DISTI # BSM300D12P2E001    		ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
    RoHS: Compliant    		4
    • 1:€895.4000
    • 4:€835.4000
    • 8:€805.4000
    • 12:€777.3800
    BSM300D12P2E001
    DISTI # TMOSP11415    		ROHM SemiconductorSICDMOS 1200V 300A 1.6V Modul
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 4:$767.9200
    BSM300D12P2E001-EDEM3
    DISTI # AS0000000000108    		AgileSwitch 
    RoHS: Compliant    		2 in Stock0 on Order
    • 100:$174.2300
    • 50:$182.9400
    • 10:$191.6500
    • 1:$200.3600
    BSM300D12P2E001ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		Americas - 6
      BSM300D12P2E001ROHM SemiconductorRoHS(ship within 1day)4
      • 1:$610.7700
      • 10:$588.8000
      • 50:$571.2300
      • 100:$562.4400
      • 500:$558.0400
      • 1000:$553.6500
      छवि भाग # विवरण
      BSM300D12P2E001

      Mfr.#: BSM300D12P2E001

      OMO.#: OMO-BSM300D12P2E001

      		 Discrete Semiconductor Modules 300A SiC Power Module
      BSM300D12P2E001-EDEM3

      Mfr.#: BSM300D12P2E001-EDEM3

      OMO.#: OMO-BSM300D12P2E001-EDEM3-1190

      		 नयाँ र मौलिक
      BSM300D12P2E001

      Mfr.#: BSM300D12P2E001

      OMO.#: OMO-BSM300D12P2E001-ROHM-SEMI

      		 MOSFET 2N-CH 1200V 300A
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1500
      मात्रा प्रविष्ट गर्नुहोस्:
      BSM300D12P2E001 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ८२५.३३
      US$ ८२५.३३
      10
      US$ ७८४.०६
      US$ ७ ८४०.६४
      100
      US$ ७४२.८०
      US$ ७४ २७९.७०
      500
      US$ ७०१.५३
      US$ ३५० ७६५.२५
      1000
      US$ ६६०.२६
      US$ ६६० २६४.००
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