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MR4A16BUYS45R

MR4A16BUYS45R
Mfr. #:
MR4A16BUYS45R
निर्माता:
Everspin Technologies
विवरण:
NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MR4A16BUYS45R डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MR4A16BUYS45R थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
एभरस्पिन टेक्नोलोजीहरू
उत्पादन कोटि:
NVRAM
RoHS:
Y
प्याकेज / केस:
TSOP-54
इन्टरफेस प्रकार:
समानान्तर
मेमोरी साइज:
16 Mbit
संगठन:
1 M x 16
डाटा बस चौडाइ:
16 bit
पहुँच समय:
45 ns
आपूर्ति भोल्टेज - अधिकतम:
3.6 V
आपूर्ति भोल्टेज - न्यूनतम:
3 V
सञ्चालन आपूर्ति वर्तमान:
180 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 125 C
शृङ्खला:
MR4A16B
प्याकेजिङ:
रील
ब्रान्ड:
एभरस्पिन टेक्नोलोजीहरू
माउन्टिङ शैली:
SMD/SMT
नमी संवेदनशील:
हो
Pd - शक्ति अपव्यय:
0.6 W
उत्पादन प्रकार:
NVRAM
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
मेमोरी र डाटा भण्डारण
Tags
MR4A16B, MR4A1, MR4A, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
MR4A08B / MR4A16B 16Mb Parallel MRAMs
Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
छवि भाग # विवरण
MR4A16BUYS45

Mfr.#: MR4A16BUYS45

OMO.#: OMO-MR4A16BUYS45

 NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
MR4A16BCYS35

Mfr.#: MR4A16BCYS35

OMO.#: OMO-MR4A16BCYS35

 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BUYS45R

Mfr.#: MR4A16BUYS45R

OMO.#: OMO-MR4A16BUYS45R

 NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
MR4A16BYS35

Mfr.#: MR4A16BYS35

OMO.#: OMO-MR4A16BYS35-EVERSPIN-TECHNOLOGIES

 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BYS35R

Mfr.#: MR4A16BYS35R

OMO.#: OMO-MR4A16BYS35R-EVERSPIN-TECHNOLOGIES

 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BCYS35

Mfr.#: MR4A16BCYS35

OMO.#: OMO-MR4A16BCYS35-EVERSPIN-TECHNOLOGIES

 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
MR4A16BCMA35

Mfr.#: MR4A16BCMA35

OMO.#: OMO-MR4A16BCMA35-EVERSPIN-TECHNOLOGIES

 IC RAM 16M PARALLEL 48FBGA
MR4A16BMA35

Mfr.#: MR4A16BMA35

OMO.#: OMO-MR4A16BMA35-EVERSPIN-TECHNOLOGIES

 IC RAM 16M PARALLEL 48FBGA
MR4A16AVMA35

Mfr.#: MR4A16AVMA35

OMO.#: OMO-MR4A16AVMA35-1190

 नयाँ र मौलिक
MR4A16BUYS45

Mfr.#: MR4A16BUYS45

OMO.#: OMO-MR4A16BUYS45-1190

 16Mb 1Mx16 Voltage 3.3V MRAM
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
MR4A16BUYS45R को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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