MR4A08BUYS45

MR4A08BUYS45
Mfr. #:
MR4A08BUYS45
निर्माता:
Everspin Technologies
विवरण:
NVRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MR4A08BUYS45 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MR4A08BUYS45 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
एभरस्पिन टेक्नोलोजीहरू
उत्पादन कोटि:
NVRAM
RoHS:
Y
प्याकेज / केस:
TSOP-44
इन्टरफेस प्रकार:
समानान्तर
मेमोरी साइज:
16 Mbit
संगठन:
2 M x 8
डाटा बस चौडाइ:
8 bit
पहुँच समय:
45 ns
आपूर्ति भोल्टेज - अधिकतम:
3.6 V
आपूर्ति भोल्टेज - न्यूनतम:
3 V
सञ्चालन आपूर्ति वर्तमान:
180 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 125 C
शृङ्खला:
MR4A08B
प्याकेजिङ:
ट्रे
ब्रान्ड:
एभरस्पिन टेक्नोलोजीहरू
माउन्टिङ शैली:
SMD/SMT
नमी संवेदनशील:
हो
Pd - शक्ति अपव्यय:
0.6 W
उत्पादन प्रकार:
NVRAM
कारखाना प्याक मात्रा:
135
उपश्रेणी:
मेमोरी र डाटा भण्डारण
Tags
MR4A0, MR4A, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
MRAM 16Mbit Parallel Interface 3.3V Automotive 44-Pin TSOP-II Tray
MR4A08B / MR4A16B 16Mb Parallel MRAMs
Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
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CURR SENSE XFMR 1:100 SMD
उपलब्धता
स्टक:
314
अर्डर मा:
2297
मात्रा प्रविष्ट गर्नुहोस्:
MR4A08BUYS45 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४५.१०
US$ ४५.१०
5
US$ ४२.६६
US$ २१३.३०
10
US$ ४२.१८
US$ ४२१.८०
25
US$ ३९.००
US$ ९७५.००
50
US$ ३७.७८
US$ १ ८८९.००
100
US$ ३६.५६
US$ ३ ६५६.००
250
US$ ३४.१३
US$ ८ ५३२.५०
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