SIZ904DT-T1-GE3

SIZ904DT-T1-GE3
Mfr. #:
SIZ904DT-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIZ904DT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ904DT-T1-GE3 DatasheetSIZ904DT-T1-GE3 Datasheet (P4-P6)SIZ904DT-T1-GE3 Datasheet (P7-P9)SIZ904DT-T1-GE3 Datasheet (P10-P12)SIZ904DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
थप जानकारी:
SIZ904DT-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAIR-6x5-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
12 A, 16 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
24 mOhms, 13.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V, 1.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
12 nC, 23 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
20 W, 33 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SIZ
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
17 S, 24 S
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
12 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
13 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
भाग # उपनाम:
SIZ904DT-GE3
Tags
SIZ904, SIZ90, SIZ9, SiZ
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:15.6W; No. of Pins:8Pins RoHS Compliant: No
***ment14 APAC
MOSFET, N-CH, 30V, 12A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:15.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:15.6W; Voltage Vgs Max:20V
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Transistor MOSFET Array Dual N-Channel 30V 9.4A/14A 6-Pin PowerPAIR
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MOSFET,NN CH,30V,18A,POWER33; Module Configuration:Dual; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.2W
***rchild Semiconductor
This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
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Transistor MOSFET Array Dual N-CH 30V 23A/46A 8-Pin Power 33 T/R - Tape and Reel
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Dual N-Channel PowerTrench® MOSFET 30V, 10mΩ, 20mΩ
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DUAL N CH MOSFET, POWERTRENCH, 30V, 18A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0078ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, NN CH, 30V, 18A/13A, POWER33; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
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Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
भाग # Mfg। विवरण स्टक मूल्य
SIZ904DT-T1-GE3
DISTI # SIZ904DT-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SIZ904DT-T1-GE3
    DISTI # SIZ904DT-T1-GE3DKR-ND
    Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3TR-ND
      Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.5205
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
        SIZ904DT-T1-GE3
        DISTI # 70616574
        Vishay SiliconixSIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR
        RoHS: Compliant
        0
        • 300:$0.6600
        • 600:$0.6500
        • 1500:$0.6400
        • 3000:$0.6200
        SIZ904DT-T1-GE3
        DISTI # 78-SIZ904DT-T1-GE3
        Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
        RoHS: Compliant
        0
        • 1:$1.1900
        • 10:$0.9740
        • 100:$0.7470
        • 500:$0.6430
        • 1000:$0.6080
        • 3000:$0.5640
        SIZ904DTT1GE3Vishay Intertechnologies 
        RoHS: Compliant
        Europe - 3000
          SIZ904DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5Americas -
            छवि भाग # विवरण
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3

            MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
            SIZ904DT

            Mfr.#: SIZ904DT

            OMO.#: OMO-SIZ904DT-1190

            नयाँ र मौलिक
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY

            MOSFET 2N-CH 30V 12A POWERPAIR
            SIZ904DTT1GE3

            Mfr.#: SIZ904DTT1GE3

            OMO.#: OMO-SIZ904DTT1GE3-1190

            Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
            उपलब्धता
            स्टक:
            Available
            अर्डर मा:
            1986
            मात्रा प्रविष्ट गर्नुहोस्:
            SIZ904DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
            सन्दर्भ मूल्य (USD)
            मात्रा
            एकाइ मूल्य
            विस्तार मूल्य
            1
            US$ १.१८
            US$ १.१८
            10
            US$ ०.९७
            US$ ९.७३
            100
            US$ ०.७५
            US$ ७४.६०
            500
            US$ ०.६४
            US$ ३२१.००
            1000
            US$ ०.५१
            US$ ५०६.००
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