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IPB80N03S4L-02

IPB80N03S4L-02
Mfr. #:
IPB80N03S4L-02
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB80N03S4L-02 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB80N03S4L-02 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.4 mOhms
Vgs - गेट-स्रोत भोल्टेज:
16 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
136 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS-T2
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
13 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
9 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
62 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
भाग # उपनाम:
IPB80N03S4L02ATMA1 IPB8N3S4L2XT SP000273282
एकाइ वजन:
0.139332 oz
Tags
IPB80N03S4L-0, IPB80N03S, IPB80N03, IPB80N0, IPB80N, IPB8, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB80N03S4L02ATMA1
DISTI # IPB80N03S4L02ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.8879
IPB80N03S4L02ATMA1
DISTI # IPB80N03S4L02ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N03S4L02ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8019
  • 2000:$0.7729
  • 4000:$0.7449
  • 6000:$0.7199
  • 10000:$0.7069
IPB80N03S4L02ATMA1
DISTI # SP000273282		Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000273282)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.1889
  • 2000:€0.9269
  • 4000:€0.8289
  • 6000:€0.7539
  • 10000:€0.7069
IPB80N03S4L02ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		16735
  • 1000:$0.5500
  • 500:$0.5800
  • 100:$0.6100
  • 25:$0.6300
  • 1:$0.6800
IPB80N03S4L-02
DISTI # 726-IPB80N03S4L-02		Infineon Technologies AGMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
RoHS: Compliant		1105
  • 1:$1.5100
  • 10:$1.2800
  • 100:$1.0300
  • 500:$0.8940
  • 1000:$0.7410
IPB80N03S4L02ATMA1
DISTI # 8268954P		Infineon Technologies AGMOSFET N-CH 80A 30V OPTIMOS-T2 TO263, RL1175
  • 125:£0.7720
  • 500:£0.6700
  • 1250:£0.6370
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2977
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IPB80N03S4L-02 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.५१
US$ १.५१
10
US$ १.२८
US$ १२.८०
100
US$ १.०३
US$ १०३.००
500
US$ ०.८९
US$ ४४७.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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