SSM3J35AFS,LF

SSM3J35AFS,LF
Mfr. #:
SSM3J35AFS,LF
निर्माता:
Toshiba
विवरण:
MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SSM3J35AFS,LF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM3J35AFS,LF DatasheetSSM3J35AFS,LF Datasheet (P4-P6)SSM3J35AFS,LF Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SSM3J35AFS,LF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-416-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
250 mA
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.1 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
500 mW (1/2 W)
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 P-Channel
ब्रान्ड:
तोशिबा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
430 mS
पतन समय:
145 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
42 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
420 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns
एकाइ वजन:
0.000085 oz
Tags
SSM3J35A, SSM3J35, SSM3J3, SSM3J, SSM3, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SSM3 High Current MOSFETs
Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Applications include mobile devices (wearable device, smart phone, tablet PC, etc.), load switches, DC-DC converters, and general purpose switches. 
छवि भाग # विवरण
ESP8285

Mfr.#: ESP8285

OMO.#: OMO-ESP8285

RF System on a Chip - SoC SMD IC ESP8285, 1MB SPI flash inside, QFN32-pin, 5*5mm
ESP32-PICO-D4

Mfr.#: ESP32-PICO-D4

OMO.#: OMO-ESP32-PICO-D4

RF System on a Chip - SoC SIP module ESP32 with 4MByte Flash, Dual Core MCU, Wi-Fi & Bluetooth Combo, LGA48-pin, 7*7mm
NTJD4401NT1G

Mfr.#: NTJD4401NT1G

OMO.#: OMO-NTJD4401NT1G

MOSFET 20V Dual N-Channel ESD Protection
MIC2545A-2YM-TR

Mfr.#: MIC2545A-2YM-TR

OMO.#: OMO-MIC2545A-2YM-TR

Power Switch ICs - Power Distribution Programmable Current Limit Single High-Side Switch
TLV74333PDBVR

Mfr.#: TLV74333PDBVR

OMO.#: OMO-TLV74333PDBVR

LDO Voltage Regulators LDO
ESP8285

Mfr.#: ESP8285

OMO.#: OMO-ESP8285-ESPRESSIF-SYSTEMS

IC RF TXRX+MCU WIFI 32VFQFN
NTJD4401NT1G

Mfr.#: NTJD4401NT1G

OMO.#: OMO-NTJD4401NT1G-ON-SEMICONDUCTOR

MOSFET 2N-CH 20V 0.63A SOT-363
M20047-1

Mfr.#: M20047-1

OMO.#: OMO-M20047-1-ANTENOVA

Antennas 1559-1609MHz GNSS Module
MIC2545A-2YM-TR

Mfr.#: MIC2545A-2YM-TR

OMO.#: OMO-MIC2545A-2YM-TR-MICROCHIP-TECHNOLOGY

Power Switch ICs - Power Distribution
M80-0110001

Mfr.#: M80-0110001

OMO.#: OMO-M80-0110001-410

Headers & Wire Housings DM LARGE BORE FE CRMP AU/SN
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
SSM3J35AFS,LF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.२७
US$ ०.२७
10
US$ ०.१८
US$ १.७६
100
US$ ०.०७
US$ ७.४०
1000
US$ ०.०५
US$ ५०.००
बाट सुरु गर्नुहोस्
Top