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BSC014NE2LSIXT

BSC014NE2LSIXT
Mfr. #:
BSC014NE2LSIXT
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC014NE2LSIXT डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSC014NE2LSIXT थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
25 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.2 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
52 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
74 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
70 S
पतन समय:
3.6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
5 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
5 ns
भाग # उपनाम:
BSC014NE2LSIATMA1 SP000911336
Tags
BSC014NE, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
भाग # Mfg। विवरण स्टक मूल्य
BSC014NE2LSIATMA1
DISTI # BSC014NE2LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 33A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10In Stock
  • 1000:$0.7818
  • 500:$0.9687
  • 100:$1.2258
  • 10:$1.5300
  • 1:$1.7200
BSC014NE2LSIATMA1
DISTI # BSC014NE2LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 33A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10In Stock
  • 1000:$0.7818
  • 500:$0.9687
  • 100:$1.2258
  • 10:$1.5300
  • 1:$1.7200
BSC014NE2LSIATMA1
DISTI # BSC014NE2LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 33A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.6819
BSC014NE2LSI
DISTI # BSC014NE2LSIATMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.4749
  • 10000:$0.4579
  • 20000:$0.4409
  • 30000:$0.4259
  • 50000:$0.4189
BSC014NE2LSIATMA1
DISTI # 50Y1794		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, 150DEG C, 74W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1:$1.3600
  • 10:$1.1600
  • 25:$1.0700
  • 50:$0.9780
  • 100:$0.8870
  • 250:$0.8360
  • 500:$0.7840
  • 1000:$0.6190
BSC014NE2LSIATMA1Infineon Technologies AGPower Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		50
  • 1000:$0.5300
  • 500:$0.5500
  • 100:$0.5800
  • 25:$0.6000
  • 1:$0.6500
BSC014NE2LSI
DISTI # 726-BSC014NE2LSIXT		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant		4578
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8870
  • 500:$0.7840
  • 1000:$0.6190
  • 5000:$0.5490
BSC014NE2LSIXT
DISTI # 726-BSC014NE2LSIATMA		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant		13
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8870
  • 500:$0.7840
  • 1000:$0.6190
  • 5000:$0.5490
BSC014NE2LSIATMA1
DISTI # 726-BSC014NE2LSI		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant		14
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8870
  • 500:$0.7840
  • 1000:$0.6190
BSC014NE2LSIATMA1
DISTI # 2480708RL		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$2.1600
  • 10:$1.8400
  • 100:$1.4100
BSC014NE2LSIATMA1
DISTI # 2480708		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON-8
RoHS: Compliant		3690
  • 1:$2.1600
  • 10:$1.8400
  • 100:$1.4100
BSC014NE2LSIATMA1
DISTI # 2480708		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON-8
RoHS: Compliant		3691
  • 5:£1.1300
  • 25:£1.0300
  • 100:£0.8050
  • 250:£0.7350
  • 500:£0.6650
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उपलब्धता
स्टक:
Available
अर्डर मा:
1987
मात्रा प्रविष्ट गर्नुहोस्:
BSC014NE2LSIXT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.३५
US$ १.३५
10
US$ १.१५
US$ ११.५०
100
US$ ०.८९
US$ ८८.७०
500
US$ ०.७८
US$ ३९२.००
1000
US$ ०.६२
US$ ६१९.००
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