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IRF7341GTRPBF

IRF7341GTRPBF
Mfr. #:
IRF7341GTRPBF
निर्माता:
Infineon / IR
विवरण:
MOSFET PLANAR_MOSFETS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF7341GTRPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7341GTRPBF DatasheetIRF7341GTRPBF Datasheet (P4-P6)IRF7341GTRPBF Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
IRF7341GTRPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
55 V
आईडी - निरन्तर ड्रेन वर्तमान:
5.1 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
65 mOhms, 65 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
29 nC, 29 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
2.4 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
3.9 mm
ब्रान्ड:
Infineon / IR
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
10.4 S, 10.4 S
पतन समय:
12.5 ns, 12.5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7.7 ns, 7.7 ns
कारखाना प्याक मात्रा:
4000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
31 ns, 31 ns
सामान्य टर्न-अन ढिलाइ समय:
9.2 ns, 9.2 ns
भाग # उपनाम:
SP001563394
एकाइ वजन:
0.017870 oz
Tags
IRF7341, IRF734, IRF73, IRF7, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 55V 5.1A 8-Pin SOIC T/R
***ark
MOSFET, DUAL N-CHANNEL, 55V, 5.1A, SO-8, Q101 qualified, TAPE & REEL
***ineon SCT
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRF7341GTRPBF
DISTI # 24580469		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 40000:$0.7564
  • 24000:$0.7583
  • 16000:$0.7602
  • 8000:$0.7621
  • 4000:$0.7641
IRF7341GTRPBF
DISTI # IRF7341GTRPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 5.1A
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.9281
IRF7341GTRPBF
DISTI # C1S322000647873		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.8420
IRF7341GTRPBF
DISTI # IRF7341GTRPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7341GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 4000:$0.7959
  • 8000:$0.7939
  • 16000:$0.7919
  • 24000:$0.7899
  • 40000:$0.7879
IRF7341GTRPBF
DISTI # 49AC0327		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3850
  • 1:$1.8400
  • 10:$1.5700
  • 25:$1.4600
  • 50:$1.3600
  • 100:$1.2500
  • 250:$1.1800
  • 500:$1.1000
  • 1000:$0.9070
IRF7341GTRPBF
DISTI # 942-IRF7341GTRPBF		Infineon Technologies AGMOSFET PLANAR_MOSFETS
RoHS: Compliant		3336
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 4000:$0.8130
IRF7341GTRPBF
DISTI # 2839483		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant		3850
  • 5:$3.3200
  • 25:$2.8900
  • 100:$2.3600
  • 250:$1.9900
  • 500:$1.7200
  • 1000:$1.6300
  • 5000:$1.5400
IRF7341GTRPBF
DISTI # 2839483		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant		3840
  • 1:£2.0100
  • 10:£1.5600
  • 100:£1.2000
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उपलब्धता
स्टक:
Available
अर्डर मा:
1986
मात्रा प्रविष्ट गर्नुहोस्:
IRF7341GTRPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.८४
US$ १.८४
10
US$ १.५७
US$ १५.७०
100
US$ १.२५
US$ १२५.००
500
US$ १.१०
US$ ५५०.००
1000
US$ ०.९१
US$ ९०७.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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