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IPB80N06S4L07ATMA2

IPB80N06S4L07ATMA2
Mfr. #:
IPB80N06S4L07ATMA2
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 60V 80A D2PAK-2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB80N06S4L07ATMA2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S4L07ATMA2 DatasheetIPB80N06S4L07ATMA2 Datasheet (P4-P6)IPB80N06S4L07ATMA2 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
IPB80N06S4L07ATMA2 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.4 mOhms
कन्फिगरेसन:
एकल
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
IPB80N06S4L
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPB80N06S4L-07 IPB8N6S4L7XT SP001028674
एकाइ वजन:
0.068654 oz
Tags
IPB80N06S4L0, IPB80N06S4L, IPB80N06S4, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 25, N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon IPB80N06S4L07ATMA2
***p One Stop Japan
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
***ronik
MOSFET 60V 6.4mOHM AECQ TO263
***i-Key
MOSFET N-CH 60V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB80N06S4L07ATMA2
DISTI # V36:1790_06384396		Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB80N06S4L07ATMA2
    DISTI # IPB80N06S4L07ATMA2-ND    		Infineon Technologies AGMOSFET N-CH 60V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$0.6505
    IPB80N06S4L07ATMA2
    DISTI # IPB80N06S4L07ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S4L07ATMA2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$0.5239
    • 6000:$0.5339
    • 4000:$0.5519
    • 2000:$0.5729
    • 1000:$0.5949
    IPB80N06S4L07ATMA2
    DISTI # 726-IPB80N06S4L07ATM    		Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2
    RoHS: Compliant    		230
    • 1:$1.3500
    • 10:$1.1500
    • 100:$0.8880
    • 500:$0.7850
    • 1000:$0.6200
    • 2000:$0.5500
    • 10000:$0.5290
    IPB80N06S4L-07
    DISTI # 726-IPB80N06S4L-07    		Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
    RoHS: Compliant    		0
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      		 Fixed Inductors 2.2uH 20% 8A 23.5mOhms AEC-Q200
      LM74610QDGKRQ1

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      		 Surface Mount Fuses 32V .5A Fast Acting
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1984
      मात्रा प्रविष्ट गर्नुहोस्:
      IPB80N06S4L07ATMA2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.४३
      US$ १.४३
      10
      US$ १.२२
      US$ १२.२०
      100
      US$ ०.९४
      US$ ९४.१०
      500
      US$ ०.८३
      US$ ४१६.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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