IPD65R660CFDATMA1

IPD65R660CFDATMA1
Mfr. #:
IPD65R660CFDATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET LOW POWER_LEGACY
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPD65R660CFDATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPD65R660CFDATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
594 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
22 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
62.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
रील
उचाइ:
2.3 mm
लम्बाइ:
6.5 mm
शृङ्खला:
CoolMOS CFDA
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
40 ns
सामान्य टर्न-अन ढिलाइ समय:
9 ns
भाग # उपनाम:
IPD65R660CFD SP001117748
एकाइ वजन:
0.139332 oz
Tags
IPD65R660CFDA, IPD65R66, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPD65R660CFDATMA1
DISTI # V36:1790_06383961
Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.5498
  • 1250000:$0.5501
  • 250000:$0.5866
  • 25000:$0.6551
  • 2500:$0.6668
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1-ND
Infineon Technologies AGMOSFET N-CH 650V 6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$0.6668
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1
Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.5759
  • 15000:$0.5859
  • 10000:$0.6069
  • 5000:$0.6299
  • 2500:$0.6529
IPD65R660CFDATMA1
DISTI # SP001117748
Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP001117748)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.5909
  • 15000:€0.6299
  • 10000:€0.6929
  • 5000:€0.7749
  • 2500:€0.9929
IPD65R660CFDATMA1
DISTI # 34AC1688
Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.594ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes0
  • 1000:$0.6880
  • 500:$0.8710
  • 250:$0.9280
  • 100:$0.9860
  • 50:$1.0800
  • 25:$1.1800
  • 10:$1.2800
  • 1:$1.4900
IPD65R660CFDATMA1
DISTI # 726-PD65R660CFDATMA1
Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant
0
  • 1:$1.4800
  • 10:$1.2700
  • 100:$0.9760
  • 500:$0.8620
  • 1000:$0.6810
  • 2500:$0.6040
  • 10000:$0.5810
IPD65R660CFDATMA1
DISTI # 2784030
Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252100
  • 100:£0.9300
  • 10:£1.2800
  • 1:£1.6100
IPD65R660CFDATMA1
DISTI # 2784030
Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252
RoHS: Compliant
0
  • 5:$1.9900
छवि भाग # विवरण
LM4132AQ1MFT2.5

Mfr.#: LM4132AQ1MFT2.5

OMO.#: OMO-LM4132AQ1MFT2-5

Voltage References Precision Low Dropout Voltage Reference
LM4132AQ1MFT2.5

Mfr.#: LM4132AQ1MFT2.5

OMO.#: OMO-LM4132AQ1MFT2-5-TEXAS-INSTRUMENTS

Voltage References Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125
उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
IPD65R660CFDATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.४८
US$ १.४८
10
US$ १.२७
US$ १२.७०
100
US$ ०.९८
US$ ९७.६०
500
US$ ०.८६
US$ ४३१.००
1000
US$ ०.६८
US$ ६८१.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
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