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SIB411DK-T1-GE3

SIB411DK-T1-GE3
Mfr. #:
SIB411DK-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 20V 9.0A 13W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIB411DK-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIB411DK-T1-GE3 DatasheetSIB411DK-T1-GE3 Datasheet (P4-P6)SIB411DK-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
SIB41, SIB4, SIB
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 20V 4.8A 6-Pin PowerPAK SC-75 T/R
***ark
P CHANNEL MOSFET, -20V, 9A, SC-75, FULL REEL
***i-Key
MOSFET P-CH 20V 9A PPAK SC75-6L
***nell
MOSFET, P, PPAK SC-75; Transistor Polarity:P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.4W; Transistor Case Style:SC-75; No. of Pins:6Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; Current Id Max:-9A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:40ns; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1V; Voltage Vgs th Min:0.4V
भाग # Mfg। विवरण स्टक मूल्य
SIB411DK-T1-GE3
DISTI # SIB411DK-T1-GE3-ND		Vishay SiliconixMOSFET P-CH 20V 9A PPAK SC75-6L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIB411DK-T1-GE3
    DISTI # 781-SIB411DK-GE3    		Vishay IntertechnologiesMOSFET 20V 9.0A 13W
    RoHS: Compliant    		0
      SIB411DK-T1-GE3Vishay Intertechnologies 2820
        छवि भाग # विवरण
        SIB411DK-T1-E3

        Mfr.#: SIB411DK-T1-E3

        OMO.#: OMO-SIB411DK-T1-E3

        		 MOSFET RECOMMENDED ALT 78-SIB441EDK-T1-GE3
        SIB411DK-T1-GE3

        Mfr.#: SIB411DK-T1-GE3

        OMO.#: OMO-SIB411DK-T1-GE3-VISHAY

        		 IGBT Transistors MOSFET 20V 9.0A 13W
        SIB411DK-T1-E3

        Mfr.#: SIB411DK-T1-E3

        OMO.#: OMO-SIB411DK-T1-E3-VISHAY

        		 MOSFET P-CH 20V 9A SC75-6
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        3000
        मात्रा प्रविष्ट गर्नुहोस्:
        SIB411DK-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ०.००
        US$ ०.००
        10
        US$ ०.००
        US$ ०.००
        100
        US$ ०.००
        US$ ०.००
        500
        US$ ०.००
        US$ ०.००
        1000
        US$ ०.००
        US$ ०.००
        2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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