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IPP60R070CFD7XKSA1

IPP60R070CFD7XKSA1
Mfr. #:
IPP60R070CFD7XKSA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET HIGH POWER_NEW
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPP60R070CFD7XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPP60R070CFD7XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
31 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
57 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
67 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
156 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
ट्यूब
शृङ्खला:
CoolMOS CFD7
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
23 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
99 ns
सामान्य टर्न-अन ढिलाइ समय:
26 ns
भाग # उपनाम:
IPP60R070CFD7 SP001617976
Tags
IPP60R07, IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 220-3
***ark
Mosfet, N-Ch, 600V, 31A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPP60R070CFD7XKSA1
DISTI # V36:1790_18787590		Infineon Technologies AGIPP60R070CFD7XKSA10
    IPP60R070CFD7XKSA1
    DISTI # IPP60R070CFD7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH TO220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		362In Stock
    • 1000:$3.9398
    • 500:$4.5235
    • 100:$5.3991
    • 10:$6.5660
    • 1:$7.3000
    IPP60R070CFD7XKSA1
    DISTI # IPP60R070CFD7XKSA1    		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 220-3 - Rail/Tube (Alt: IPP60R070CFD7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 500:$3.7900
    • 1000:$3.5900
    • 2000:$3.4900
    • 3000:$3.3900
    • 5000:$3.2900
    IPP60R070CFD7XKSA1
    DISTI # SP001617976    		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 220-3 (Alt: SP001617976)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€3.9900
    • 10:€3.5900
    • 25:€3.4900
    • 50:€3.2900
    • 100:€3.1900
    • 500:€3.0900
    • 1000:€2.8900
    IPP60R070CFD7XKSA1
    DISTI # 43AC9326    		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes318
    • 500:$4.1100
    • 250:$4.5100
    • 100:$4.7200
    • 50:$5.0800
    • 25:$5.4300
    • 10:$5.7000
    • 1:$6.3100
    IPP60R070CFD7XKSA1
    DISTI # 726-IPP60R070CFD7XKS    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$6.3100
    • 10:$5.7000
    • 25:$5.4300
    • 100:$4.7200
    • 250:$4.5100
    • 500:$4.1100
    IPP60R070CFD7XKSA1
    DISTI # 2807982    		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220
    RoHS: Compliant    		318
    • 1000:$5.6600
    • 500:$5.9500
    • 250:$6.2700
    • 100:$6.6300
    • 10:$7.5000
    • 1:$8.0200
    IPP60R070CFD7XKSA1
    DISTI # 2807982    		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220
    RoHS: Compliant    		320
    • 500:£3.2800
    • 250:£3.6000
    • 100:£3.7700
    • 10:£4.3400
    • 1:£5.5500
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    IPP60R060P7XKSA1

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    LMZM33602RLRR

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    ADUM1100BRZ

    Mfr.#: ADUM1100BRZ

    OMO.#: OMO-ADUM1100BRZ

    		 Digital Isolators Digital SGL CH
    FCP125N65S3R0

    Mfr.#: FCP125N65S3R0

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    Mfr.#: LMZM23600V3SILT

    OMO.#: OMO-LMZM23600V3SILT-TEXAS-INSTRUMENTS

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    LMZM23600V5SILT

    Mfr.#: LMZM23600V5SILT

    OMO.#: OMO-LMZM23600V5SILT-TEXAS-INSTRUMENTS

    		 6-V, 0.5-A Step-Down DC/DC Power Module
    IPP60R060P7XKSA1

    Mfr.#: IPP60R060P7XKSA1

    OMO.#: OMO-IPP60R060P7XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 48A TO220-3
    ADUM1100BRZ

    Mfr.#: ADUM1100BRZ

    OMO.#: OMO-ADUM1100BRZ-ANALOG-DEVICES-INC-ADI

    		 Digital Isolators Digital SGL CH
    BMOD0002 P005 B02

    Mfr.#: BMOD0002 P005 B02

    OMO.#: OMO-BMOD0002-P005-B02-MAXWELL-TECHNOLOGIES

    		 CAP 2.5F -10% +20% 5V T/H
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1984
    मात्रा प्रविष्ट गर्नुहोस्:
    IPP60R070CFD7XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ६.३१
    US$ ६.३१
    10
    US$ ५.७०
    US$ ५७.००
    25
    US$ ५.४३
    US$ १३५.७५
    100
    US$ ४.७२
    US$ ४७२.००
    250
    US$ ४.५१
    US$ १ १२७.५०
    500
    US$ ४.११
    US$ २ ०५५.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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