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SI7850DP-T1-GE3

SI7850DP-T1-GE3
Mfr. #:
SI7850DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7850DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7850DP-T1-GE3 DatasheetSI7850DP-T1-GE3 Datasheet (P4-P6)SI7850DP-T1-GE3 Datasheet (P7-P9)SI7850DP-T1-GE3 Datasheet (P10-P12)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
10.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
22 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
18 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
4.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI7
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
26 S
पतन समय:
12 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
10 ns
भाग # उपनाम:
SI7850DP-GE3
एकाइ वजन:
0.017870 oz
Tags
SI7850DP-T1, SI7850DP-T, SI7850DP, SI7850D, SI7850, SI785, SI78, SI7
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 0.022 Ohm SMT TrenchFET Power Mosfet - PowerPAK SO-8
***ment14 APAC
N CHANNEL MOSFET, 60V, 10.3A, SOIC, FULL
***p One Stop Global
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 60V 6.2A PPAK SO-8
***ukat
N-Ch 60V 10,3A 4,5W 0,022R PowerPakSO8
***ronik
N-CH 60V 10,3A 22mOhm PPSO-8
***
60V, 22 MOHMS@10V, PWM
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.8W; No. Of Pins:8Pins Rohs Compliant: No
***nell
MOSFET CANALE N 60V, 6,2A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.2A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:1.8W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
भाग # Mfg। विवरण स्टक मूल्य
SI7850DP-T1-GE3
DISTI # V72:2272_09216395		Vishay IntertechnologiesTrans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
RoHS: Compliant		344
  • 250:$1.0996
  • 100:$1.2217
  • 25:$1.3649
  • 10:$1.5166
  • 1:$1.8573
SI7850DP-T1-GE3
DISTI # V36:1790_09216395		Vishay IntertechnologiesTrans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
RoHS: Compliant		0
  • 3000:$0.9135
SI7850DP-T1-GE3
DISTI # SI7850DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 60V 6.2A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20224In Stock
  • 1000:$0.8346
  • 500:$1.0073
  • 100:$1.2260
  • 10:$1.5250
  • 1:$1.7000
SI7850DP-T1-GE3
DISTI # SI7850DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 6.2A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20224In Stock
  • 1000:$0.8346
  • 500:$1.0073
  • 100:$1.2260
  • 10:$1.5250
  • 1:$1.7000
SI7850DP-T1-GE3
DISTI # SI7850DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 6.2A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		18000In Stock
  • 6000:$0.7265
  • 3000:$0.7544
SI7850DP-T1-GE3
DISTI # 30331667		Vishay IntertechnologiesTrans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
RoHS: Compliant		344
  • 7:$1.8573
SI7850DP-T1-GE3
DISTI # SI7850DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7850DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6410
  • 18000:$0.6588
  • 12000:$0.6775
  • 6000:$0.7062
  • 3000:$0.7278
SI7850DP-T1-GE3
DISTI # SI7850DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R (Alt: SI7850DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7850DP-T1-GE3
    DISTI # SI7850DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R (Alt: SI7850DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.5729
    • 18000:€0.5989
    • 12000:€0.6779
    • 6000:€0.8359
    • 3000:€1.1649
    SI7850DP-T1-GE3
    DISTI # 05AC9509    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 6.2A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:6.2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes12000
    • 1:$1.0800
    • 3000:$1.0800
    SI7850DP-T1-GE3
    DISTI # 01AC5008    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 6.2A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:6.2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes4128
    • 1000:$0.9650
    • 500:$1.1200
    • 100:$1.3900
    • 50:$1.4800
    • 25:$1.5800
    • 10:$1.6800
    • 1:$1.8300
    SI7850DP-T1-GE3.
    DISTI # 28AC2180    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:6.2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.8W,No. of Pins:8Pins RoHS Compliant: No0
    • 1:$1.0800
    • 3000:$1.0800
    SI7850DP-T1-GE3
    DISTI # 781-SI7850DP-GE3    		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		5586
    • 1:$1.9100
    • 10:$1.7400
    • 100:$1.4100
    • 500:$1.1000
    • 1000:$1.0700
    SI7850DP-T1-GE3
    DISTI # 2679705    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 6.2A, POWERPAK SO
    RoHS: Compliant    		12000
    • 12000:$0.8460
    • 9000:$0.8640
    • 6000:$0.8820
    • 3000:$0.9000
    SI7850DP-T1-GE3
    DISTI # 2646395    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 6.2A, POWERPAK SO
    RoHS: Compliant    		4128
    • 1000:$1.2600
    • 500:$1.5200
    • 100:$1.8500
    • 10:$2.3000
    • 1:$2.5600
    SI7850DP-T1-GE3
    DISTI # 2679705    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 6.2A, POWERPAK SO12000
    • 9000:£0.5890
    • 3000:£0.6010
    SI7850DP-T1-GE3
    DISTI # SI7850DP-GE3    		Vishay IntertechnologiesN-Ch 60V 10,3A 4,5W 0,022R PowerPakSO8
    RoHS: Compliant    		6150
    • 25:€0.6730
    • 100:€0.5730
    • 300:€0.5230
    • 1000:€0.5035
    SI7850DP-T1-GE3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas - 24000
    • 3000:$0.6450
    • 6000:$0.6130
    • 12000:$0.5930
    • 18000:$0.5770
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    Mfr.#: MGJ6D242005DC

    OMO.#: OMO-MGJ6D242005DC-MURATA-POWER-SOLUTIONS

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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1988
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    SI7850DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.९१
    US$ १.९१
    10
    US$ १.७४
    US$ १७.४०
    100
    US$ १.४१
    US$ १४१.००
    500
    US$ १.१०
    US$ ५५०.००
    1000
    US$ १.०७
    US$ १ ०७०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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